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Experiment

Experiment. ZTO TFT, sol-gel on chip process. 1. Effect of tin precursor (300°C, wet annealing). 1) Tin isopropoxide. 2) Tin(IV) chloride. 3) Tin(IV) tert -butoxide. Mobility 0.014. Mobility 0.007. Result. 2. Effect of catalyst (acetic acid) 300°C, dry annealing. Acetic acid.

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Experiment

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  1. Experiment ZTO TFT, sol-gel on chip process 1. Effect of tin precursor (300°C, wet annealing) 1) Tin isopropoxide 2) Tin(IV) chloride 3) Tin(IV) tert-butoxide Mobility 0.014 Mobility 0.007

  2. Result 2. Effect of catalyst (acetic acid) 300°C, dry annealing Acetic acid 1) Tin isopropoxide 2) Tin(IV) chloride 3) Tin(IV) tert-butoxide

  3. 2. Effect of catalyst (acetic acid) Tin tert-butoxide + Acetic acid Direct gelation

  4. Experiment 실험 상세

  5. Precursor Tin isopropoxide Dry 1) Tin isopropoxide Acetic acid Wet

  6. Precursor Tin(IV) chloride Dry 2) Tin(IV) chloride Acetic acid Wet

  7. Precursor Tin tert-butoxide Dry 3) Tin(IV) tert-butoxide Acetic acid Wet

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