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Production of 3D silicon pixel sensors at FBK for the ATLAS IBL. Alvise Bagolini a , Maurizio Boscardin a , Gian -Franco Dalla Betta b , Gabriele Giacomini a , Francesca Mattedi a , Marco Povoli b , Nicola Zorzi a. a Fondazione Bruno Kessler (FBK-CMM) Italy

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Alvise Bagolini a , Maurizio Boscardin a ,

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Alvise bagolini a maurizio boscardin a

Production of 3D silicon pixel sensors at FBK for the ATLAS IBL

Alvise Bagolinia, Maurizio Boscardin a,

Gian-Franco Dalla Bettab, Gabriele Giacominia,

Francesca Mattedia, Marco Povolib, Nicola Zorzia

a Fondazione Bruno Kessler (FBK-CMM) Italy

  • b INFN and University of Trento, Italy


Alvise bagolini a maurizio boscardin a

3D silicon pixel sensor production

  • The layout has been developed in thein the framework of the ATLAS 3D Sensor Collaboration

  • FE-I4 (8x)

  • FE-I3 (9x)

  • CMS (3x)

  • test structures

3D_DDTC with passing-through

columns technology was used for the first production oriented to the ATLAS insertable B-Layer


Alvise bagolini a maurizio boscardin a

Layout details of a FE_I4 sensor

50 µm

FE-I4 sensor  80 x 336 pixels

Ohmic Side

125 µm

Junction side

dead area of 200 mm


Alvise bagolini a maurizio boscardin a

3D-DTC with passing through columns

n+ col.

  • Column depth equal to the wafer thickness, etched from both sides

  • Full double side process

  • Surface isolation with p-spray on both sides

  • No support wafer

  • Columns (~12 µm diam.) are “empty”, doped by thermal diffusion and passivated by SiO2

  • Edge protection in order to improve the mechanical yield

p-sub

t

p-spray

p+ col.

edge protection


Alvise bagolini a maurizio boscardin a

Main technological aspects

  • Optimization of DRIE recipe for holes with higher aspect ratio in order to improve the uniformity of the etch rate throughout the process.

  • Optimization of edge protection in order to

    • increase the mechanical yield after DRIE etching

    • reduce the wafer bowing and consequently the leakage current


Optimize drie recipe for holes with higher aspect ratio

Optimize DRIE recipe for holes with higher aspect ratio

208 µm

≈ 11 µm

≈ 12 µm

≈ 234 µm

≈ 5 µm

≈ 10 µm

Etch stop for DRIE etching


Optimize edge protection

Optimize edge protection

  • Mechanical fragility of wafers manly due to a cracks on the wafer edge caused by D-RIE etch step:

    • Need a special edge protection during DRIE etching (electrostatic clamping) to prevent the creation of cracks that could cause the breakage during the processing.

    • Need a special care during processing

Mechanical yield with the optimized edge protection:


Alvise bagolini a maurizio boscardin a

Optimize edge protection: wafer bowing

Edge protection effects on the wafer bowing.

A high bowing induces

  • High leakage current

  • Misalignment among columns

  • Bonding problem

Old edge protection  wafers warp up to 120 µm

Optimizededgeprotection waferswarp< 30 µm

3D_ATLAS10


Wafer bowing leakage current

Wafer bowing: leakage current

The wafer bowing strongly influences the leakage current.

With the optimized edge protection it is reduced of one order of magnitude.

Leakage current on planar test diodes (4mm2)

Old edge protection

Optimized edge protection


Wafer bowing column alignment

Wafer bowing: Column alignment

left side

right side

center

old edge protection

misalignmentof a several μm

optimized edge protection layer

Misalignment < 5μm


Temporary metal for electrical characterization

Temporary metal for electrical characterization

  • The temporary metal shorts 336 pixels together in a strip

  • Allows to perform electrical tests on the FE-I4 pixel sensors before bump-bonding

  • The IV characteristics of 80 strips form a FE-I4 pixel sensor

336 pixels ( 2 electrodes per pixel)

80 strip


Temporary metal iv characteristics

Temporary Metal: IV characteristics

The IV characteristics of 80 strips of two sensors

The IV characteristics of FE-I4 pixel sensor as a sum of 80 IV strips curves


Alvise bagolini a maurizio boscardin a

VBDand Ileakof the FE-I4 strips

Good uniformity from batch to batch related to the 80 strips of each detector


Alvise bagolini a maurizio boscardin a

Numbers of production

4 production batches

Selected wafers  at least 3 FE-I4 sensors qualified

  • Selection criteria before bump-bonding:

    • Vdepl≤ 15V and

    • Vop≥Vdepl +10V

    • I (Vop) < 2mA per tile

    • Vbd> 25V

    • [I (Vop) / I(Vop – 5V)] < 2


Alvise bagolini a maurizio boscardin a

ProblemInvestigation on 3D_Atlas11

Litho n+ on junction side

Problem with resist adhesion

Low final yield


Alvise bagolini a maurizio boscardin a

Conclusion

FBK hasdeveloped and optimized the technologyused for the production of Si-3D pixel sensors for the ATLAS IBL with a relativelygoodyield.

Outlook

  • advantages

  • Production capability = double the wafers area

  • DRIE upgrade with a thin ceramic edge protection = increasing of the mechanical yield

Upgrade to 6 inch

  • disadvantage

  • We have to learn how to process a thin wafers


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