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BJT Processing. 1. Implantation of the buried n + layer. 2. Growth of the epitaxial layer. 3. p + isolation diffusion. n + layer. p + layer. n + layer. 4. Base p-type diffusion. p-base layer. 5. Emitter n + diffusion. n + buried layer. 6. p + ohmic contact. p-substrate.

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Bjt processing
BJT Processing

1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion

n+ layer

p+ layer

n+ layer

4. Base p-type diffusion

p-base layer

5. Emitter n+ diffusion

n+ buried layer

6. p+ ohmic contact

p-substrate

7. Contact etching

8. Metal deposition and etching

9. Passivation and bond pad opening


Bjt processing1
BJT Processing

1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion

6. p+ ohmic contact

7. Contact etching

8. Metal deposition and etching

p-substrate

9. Passivation and bond pad opening


Bjt processing2
BJT Processing

1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion

6. p+ ohmic contact

n epi layer

7. Contact etching

n+ buried layer

8. Metal deposition and etching

p-substrate

9. Passivation and bond pad opening


Bjt processing3
BJT Processing

1. Implantation of the buried n+ layer

p+ isolation layer

p+ isolation layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion

6. p+ ohmic contact

7. Contact etching

n+ buried layer

8. Metal deposition and etching

p-substrate

9. Passivation and bond pad opening


Bjt processing4
BJT Processing

1. Implantation of the buried n+ layer

p+ isolation layer

p+ isolation layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion

6. p+ ohmic contact

p-base layer

7. Contact etching

n+ buried layer

8. Metal deposition and etching

p-substrate

9. Passivation and bond pad opening


Bjt processing5
BJT Processing

1. Implantation of the buried n+ layer

p+ isolation layer

p+ isolation layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion

n+ layer

n+ layer

6. p+ ohmic contact

p-base layer

7. Contact etching

n+ buried layer

8. Metal deposition and etching

p-substrate

9. Passivation and bond pad opening


Bjt processing6
BJT Processing

1. Implantation of the buried n+ layer

p+ isolation layer

p+ isolation layer

2. Growth of the epitaxial layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion

n+ layer

p+ layer

n+ layer

6. p+ ohmic contact

p-base layer

7. Contact etching

n+ buried layer

8. Metal deposition and etching

p-substrate

9. Passivation and bond pad opening


Bjt processing7
BJT Processing

1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

p+ isolation layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion

n+ layer

p+ layer

n+ layer

6. p+ ohmic contact

p-base layer

7. Contact etching

n+ buried layer

8. Metal deposition and etching

p-substrate

9. Passivation and bond pad opening


Bjt processing8
BJT Processing

1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

p+ isolation layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion

n+ layer

p+ layer

n+ layer

6. p+ ohmic contact

p-base layer

7. Contact etching

n+ buried layer

8. Metal deposition and etching

p-substrate

9. Passivation and bond pad opening


Bjt processing9
BJT Processing

1. Implantation of the buried n+ layer

2. Growth of the epitaxial layer

p+ isolation layer

3. p+ isolation diffusion

4. Base p-type diffusion

5. Emitter n+ diffusion

n+ layer

p+ layer

n+ layer

6. p+ ohmic contact

p-base layer

7. Contact etching

n+ buried layer

8. Metal deposition and etching

p-substrate

9. Passivation and bond pad opening





Modifications to a bjt process
Modifications to a BJT Process

Dielectric isolation --- substrate isolation

Superbeta transistors

Double diffusion --- make acceptable JFETs

Ion implanted JFETs --- make good JFETs

Double diffused pnp BJTs --- make good pnp devices


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