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class B, AB and D rf power amplifiers in 0,40 um cmos teChnology

class B, AB and D rf power amplifiers in 0,40 um cmos teChnology. Daniele Agnese MSICT – RF System On Chip 2006/’07. Summary. General idea Technology comparison (CMOS, GaAsFET ) Power amplifiers topology Class B Class AB Class D Project description Simulations/Results Conclusion.

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class B, AB and D rf power amplifiers in 0,40 um cmos teChnology

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  1. class B, AB and D rf power amplifiers in 0,40 umcmosteChnology Daniele Agnese MSICT – RF System On Chip 2006/’07

  2. Summary • General idea • Technology comparison (CMOS, GaAsFET) • Power amplifiers topology • Class B • Class AB • Class D • Project description • Simulations/Results • Conclusion

  3. General idea • ADS • Power amplifiers tutorial • Transistor’s model • Circuit adaptation • Simulations change

  4. Technology comparison GaAsFET 0.4 μm CMOS Vth -2.5 V 0.5 V VDS - IDS

  5. Power amplifier - Class B • Circuit Crossover distortion: 50% of cycle conducting

  6. Power amplifier - Class AB • Circuit

  7. Power amplifier - Class D • Circuit

  8. Project description • Power supply • Working point (Bias ports) • Transistor’s parameters • Power input signal • Load adaptation

  9. Simulations/Results • Class B – 1/2 50% T=1/850 MHz = 1,2 ns Linear region: Vds < Vgs - Vth

  10. Simulations/Results • Class B – 2/2 PAE = (Pload – Pin) / Psupply

  11. Simulations/Results • Class AB – 1/2

  12. Simulations/Results • Class AB – 2/2

  13. Simulations/Results • Class D – 1/2

  14. Simulations/Results • Class D – 2/2

  15. Conclusion • Improvements: • Optimize transistors width • Efficiency • Matching network • Reduce current leakage

  16. Any questions? Doubts? or comments?

  17. Thank you a lot for your attention!

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