Gossipo-3:  a test of a 1-ns TDC-per-pixel and an integrated Temp-sensor in a 0.13um CMOS technology
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Gossipo-3: a test of a 1-ns TDC-per-pixel and an integrated Temp-sensor in a 0.13um CMOS technology. Christoph Brezina 2 , Klaus Desch 2 , Harry van der Graaf 1 , Vladimir Gromov 1 , Ruud Kluit 1 , Andre Kruth 2

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Gossipo-3: a test of a 1-ns TDC-per-pixel and an integrated Temp-sensor in a 0.13um CMOS technology

Christoph Brezina2, Klaus Desch2 , Harry van der Graaf 1, Vladimir Gromov 1, Ruud Kluit 1, Andre Kruth2

1National Institute for Subatomic Physics (Nikhef), 1098 XG Amsterdam, the Netherlands,

2Institute of Physics, Bonn University, D-53115, Germany.

Abstract

In a joint effort of Nikhef (Amsterdam) and University of Bonn, the Gossipo-3 MPW test chip is being developed in which preamp-shaper-discriminator circuitry is being evaluated, as well as the performance of a low-power TDC-per-pixel circuit with a resolution of 1 ns. In another development, an on-chip temperature sensor is being designed, as an evolution of the previously realized CMOS bandgap reference.

Micro-Pattern Gas Detectors : the read-out

Gossipo-3: MPW prototype

  • Features

  • each pixel measures:

  • - hit arrival time → cluster’s drift time

  • time-over-threshold → charge deposit

  • triggering options:

  • external common stop

  • self-triggering (fast OR → common stop)

  • read-out options:

  • serial read-out of all the pixels

  • other functionalities:

  • - on-pixel memory (one event deep)

  • auto clear (no stop signal after expected latency)

  • multi-hit flag

  • 4-bit Threshold DAC (in each pixel)

  • INGRID & pixel analog signal monitors

Cathode (drift) plane

Cluster1

Cluster2

1mm … 30cm

Cluster3

Integrated Grid

Front-end Readout Chip

  • Requirements: [1]

  • - high-dense pixel structure (55μm x 55μm)

  • high efficiency of detecting of single primary electrons

  • high resolution (1ns) and wide dynamic range (10us) TDC-per-pixel

  • a smart architecture of the pixels readout

  • low power consumption

  • - array: 32 x 32, 1024 pixels

  • active area: 1.76mm x 1.76mm

  • terminating. (empty) pixels:

  • 4 rows (columns)

  • -chip size: 3.5 x 3.9 mm (13.6mm2)

  • - serial readout & configuration

On-pixel fast oscillator

0ns…Tslow (25 ns)

EN

OUT

Tfast (1.8 ns)

NAND

EN

Gossipo-3: the pixel

OUT

Delay = Tfast/2 = Function (Temp, Vdd)

0…15 (4-bit TDC)

Block diagram

VDD effect

Temp effect

Local

fast oscillator

(600MHz)

4 bit Fast counter

Tfast ,ns

Tfast ,ns

2% / 10 ◦C

  • Main specifications

  • front-end:

  • - input parasitic capacitance < 10 fF

  • input noise σ ≈ 70 e-

  • - threshold ≈ 350 e-

  • - fast response ≈ 10ns (rise-time)

  • drift time measurements:

  • - event clock 40MHz

  • accuracy (bin size) 1.8ns (4-bit @ 25ns)

  • range 6.4μs (8-bit @ 25ns)

  • ToT measurements:

  • accuracy 25ns

  • range 400ns (4-bit @ 25ns)

  • data read-out :

  • 5-bit bus

  • total read-out time 100us

  • power consumption:

  • - goal →100mW/cm2 (3μW/pixel)

4 bit ToT counter

- 12% / 100mV

  • Count/shift (data taking)

  • or

  • LFSR/shift (data read-out)

Preamp

Discr.

control

pad

Channel-to-channel statistical spread is 4%

8 bit Slow counter

Threshold

-Test

-Mask

Temperature, ◦C

Power supply voltage, Volts

Thr DAC

  • Bus control signals

  • Clock

  • TRIGGER (common stop)

  • Read

  • RESET

1-4 bit ovfl.

∆ VDD < 50 mV

∆ TEMP < 30◦ C

accumulated error < 6% (1.8 ns or 1 TDC)

6 bit Pixel configuration

On-chip Temperature Sensor [2]

Time diagrams

Preamp

  • Motivations:

  • monitoring of the local temperature in large volume detectors

  • could be used to control detector cooling systems and improve safety

Hit (asynchronous)

ToT

Clock

Counter Fast

Iref

Counter ToT

reset (once per sample)

Trigger

bit stream ~ Itemp / Iref

60pF

Counter Slow

Comp

Counter

Itemp

D

Q

data

Token

Threshold

Reset

Clk

(25kHz)

Data read-out Phase (LFSR = Shift Registers)

Data taking phase (LFSR = Counter)

Σ∆ analog-to-digital converter

A Radiation Hard Bandgap Reference Circuit (featuring DTMOST’s) [3]

  • Main specifications

  • - accuracy: ± 1 °C

  • range: -40 °C….. +100 °C

  • bandwidth: 50 samples/sec

Plans

Phase1:

. a small-size (1mm2) MPW prototype chip: individual basic circuits (preamplifier, discriminator, local oscillator, TDC)

. tape-out: July 11, 2009

Phase2 :

. a large-size (13.6mm2) MPW prototype chip: 32x32 pixels array with required periphery circuits.

. tape-out: November 9, 2009

References:

[1] V.Gromov, R.Kluit, H. van derGraaf ”Development of a Front-end Pixel chip for Readout of Micro-Pattern Gas Detectors” Proceeding of Topical Workshop on Electronics for Particle Physics (TWEPP-08), pp.76-79, Naxos, Greece, September 2008.

[2] A. Bakker and J.H.Huijsing “Micropower CMOS Temperature Sensor with Digital Output”, IEEE Journal of Solid-State Circuits, Vol.31, No7, July 1996.

[3] V.Gromov, A.J. Annema, R. Kluit et al., “A Radiation Hard Bandgap Reference Circuit in a Standard 0.13um CMOS Technology,” IEEE Transactions on Nuclear Science, vol.54, issue 6, pp. 2727-2733, Dec. 2007.


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