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Occupancy studies for CLIC_ILD inner layer and Update on Digitization : Tuning with data, Lorentz angle effects. Mathieu Benoit. Outline. First results on Occupancy for the inner layer of CLIC_ILD Following design from workshop

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Occupancystudies for CLIC_ILD inner layer and Update on Digitization: Tuningwith data, Lorentz angle effects

Mathieu Benoit

outline
Outline
  • First results on Occupancy for the inner layer of CLIC_ILD Following design from workshop
  • Inclusion of Magnetic Field effects in Digitization
  • DESY 2-4 GeVelectrons data usingTimepix single chip card
slide3

(sub) Barrel 4 or

Right Outer barrel

(sub) Barrel 3 or

Right inner barrel

(sub) Barrel 2 or

Central barrel

(sub) Barrel 1 or

Leftinner barrel

(sub) Barrel 0 or

LeftOuter barrel

simulation
Simulation
  • For Now simulation of layer 0+1, resultshere for layer 0 , the mostcriticalat r=29 mm
  • Simulation withLivermoreLow EM Physicslist
    • Max Step-size in Silicon =1 um
    • Includedetla rays , fluorescence
  • Geometry :
    • Magnetic Field = 4 T
    • Beryliumbeam pipe (600um)
    • Inside beampipe : air at 1e-2 bar
  • Timepix-Likedigitization
    • 20x20um pixels
    • 50 umthickness
    • Resistivity = 10 kOhm cm
    • Threshold = 500e
    • Lorentx angle not takenintoaccounthere
  • Plots are preliminary, need to includeactual gap in phi
    • Module 90 (top right) missing, beingprocessed
barrel layout layer 0 1
Barrel layout (layer 0+1)
  • To ensurehermeticity, layer 0+1need to beplacedcloser to IP than MC model
    • Option 1:
      • Radius(layer 1) = 29 mm (31mm before)
      • Radius(layer 2) =30.87mm (32.87mm before)
      • To avoid volume overlap, slightly tilt the ladders (here1.5°)
    • Option 2:
      • Tilt sensors by lorentz angle (ex: 15 deg)
      • Add 1-2 ladders (here , 2-> Icosagon !)
      • Move back to larger radius (here31.221 mm)

mini workshop on engineering aspects of the CLIC vertex detectors

barrel layout layer 0 1 option 1
Barrel layout (layer 0+1, option 1)

Single hits

Double layer, holding on the samemechanical structure not shownhere

An option to option 1: Shifting layer 2 vs layer 1 (here 1mm), ladder per ladder to avoidoverlapping gaps

mini workshop on engineering aspects of the CLIC vertex detectors

occupancy simulation
Occupancy Simulation
  • 2 Scenario :
    • 20 um pixels, samegeometry + B-Field effect, layer 0-5
    • 25 um pixels, layer back by 4mm in r + B-fieldeffects layer 0-5
  • In both scenario weneed to addhadronic components, disks
lorentz angle
Lorentz angle
  • Lorentz angle depends on mobilitywhichdepends on Electric field and eventually on dopant concentration
  • In a 50um 10kOhmcm p-type wafer, 10V bias, E≈[1600,2700]V/cm
    • Varywithresistivity, bias voltage
  • In a planarsensor, E isproportional to V applied
    • V appliedisproportional to thickness2 (Full depletion voltage)
    • For thinsensor, at full depletion voltage, Electric fieldisverylow
    • To beinvestigated : How much over Full depletioncanweapply voltage

mini workshop on engineering aspects of the CLIC vertex detectors

lorentz angle effects in digitization
Lorentz angle effects in Digitization
  • I have added as an option in the digitizer to takintoaccount the Magneticfield in the motion equation of the charge in the sensor.
    • The Lorentz angle iscalculatedateachintegrationsteptakingintoaccount :
      • Local mobility and electricfield
      • Hall Scattering factor
lorentz angle effects cluster size
Lorentz angle effects (Cluster Size)

!!

Lorentz angle increases cluster size (in average) -> Increaseoccupancy

desy data with low energy 2 4 gev electrons
DESY data withlowenergy (2-4 GeV) electrons
  • Wewereallowed to join ATLAS DBM testbeamat DESY to acquiresome data withTimepixusinglowenergyelectrons (2-4 GeV) (No Tracking)
    • 6M Frames at 100V 0 deg
    • 5K Frames at 0,25,50,75 deg
    • 5k Frames at 0deg, 5V, 10V, 50V
    • 5k Frames atIkrum 25,50,100
  • In average 500 clusters per frame
  • ToT mode
conclusion
Conclusion
  • Detailed simulation of inner layer for CLIC_ILD new design show higheroccupanciesthan CDR numbers :
    • Layer is 4 mm closerthanbefore -> Higheroccupancy
    • Phi dependenceobserved in the end-of-stave chips
    • Next simulation to beperfomedwith B-Field effectsincluded, larger pixels
  • Lorentz angle effects have been encoded in the digitizer
    • Debuggedusing the new event display feature of the digitizer
    • Ready for use in occupanciesstudies
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