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Spezielle Anwendungen des VLSI – Entwurfs Applied VLSI design

Spezielle Anwendungen des VLSI – Entwurfs Applied VLSI design. Changes across technologies Results of Phase 5 Andy Schellin. Fundamentals. Why changing manufacturing technology? Functionally reasons Economically reasons Lower Voltage Higher frequency. Power Loss. Problems.

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Spezielle Anwendungen des VLSI – Entwurfs Applied VLSI design

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  1. Spezielle Anwendungen des VLSI – Entwurfs Applied VLSI design Changesacrosstechnologies Resultsof Phase 5 Andy Schellin

  2. Fundamentals • Why changing manufacturing technology? • Functionally reasons • Economically reasons • Lower Voltage • Higher frequency Power Loss

  3. Problems • RC delay of global wires • Gate oxid tunneling • Sub-threshold leakage • Leakage grows exponentially Fig:1 Leakage power grows exponentially [6]

  4. Results with design

  5. Results with design

  6. Further technology improvements • 3D – Transistors (FinFET) with high-k gate dielectric • Low-k materials for separating wires • Substrate Biasing • 5nm technology until 2019

  7. Thank you for your attention

  8. References [1] http://www.ieee.org/portal/cms_docs_societies/sscs/PrintEditions/200701.pdf [2] http://www.eetimes.com/design/automotive-design/4016329/Solve-leakage-and-dynamic-power-loss [3]http://www.cs.cmu.edu/afs/cs/academic/class/15740-f03/public/doc/discussions/uniprocessors/power/isca02.pdf&sa=X&scisig=AAGBfm2jwcfhEOYVpQsHCHvWjLK134ml3g&oi=scholarr&ei=VxzwUPyMC8bJswb294G4DA&sqi=2&ved=0CDwQgAMoADAA [4] http://www.dailytech.com/IDF+2011+Intel+Looks+to+Take+a+Bite+Out+of+ARM+AMD+With+3D+FinFET+Tech/article22719.htm [5] Xiaodong Zhang, “High Performance Low Leakage Design Using Power Compiler and Multi-Vt Libraries”, Synopsys, SNUG, Europe, 2003, www.synopsys.com, 10/9/2007 [6] http://www.anandtech.com/print/1611

  9. Backup Fig2: Scaling Results for Circuit Performance [1]

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