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奈米科技概論期末報告 Reporter: 王瑋 系級 : 成大工程科學所 學號 :N96964359 - PowerPoint PPT Presentation


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奈米科技概論期末報告 Reporter: 王瑋 系級 : 成大工程科學所 學號 :N96964359. Light emitting diodes of fully Conjugated heterocyclic aromatic rigid-rod polymer doped with multi-wall carbon nanotubes. Nanotechnology vol. 16(1406) May 2005. Jen-Wei Huang and Shih Jung Bai

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Reporter n96964359

奈米科技概論期末報告

Reporter:王瑋

系級:成大工程科學所

學號:N96964359


Light emitting diodes of fully Conjugated

heterocyclic aromatic rigid-rod polymer

doped with multi-wall carbon nanotubes

Nanotechnology vol. 16(1406) May 2005

Jen-Wei Huang and Shih Jung Bai

Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China


Outline
Outline

  • Introduction and motivation

  • Design

  • Results & Conclusions


PBO

poly-p-phenylenebenzo- bisoxazole (PBO)

is a rigid-rod polymer

with a fully conjugated heterocyclic aromatic backbone.

  • Applications

    • Polymer Light Emitting Diodes (PLED)

    • Polymer/Organic Thin Film Transistors (OTFT)

    • Solar Cell Substrate

PBO

Excellent thermo-oxidative stability

Ease of thin-film processing


Thin film processing
Thin Film Processing

Polymer Solution Preparing

Lewis Acid

MSA

Thin Films on ITO Glass

Freestanding Thin Film

Cathode Deposition

UV-Vis Spectrum

2000

I-V Measurement

PL

Spectrum

Opto-electronic Characteristics

Luminescent Characteristics


Experimental instrument

Transmission electron microscope (TEM)

Field-emission scanning electron microscope (FE-SEM)

JEOL JSM-6330TF


PBO films containing 0.1wt% MWNTs

Field-emission scanning electron

Micrographs Of the cross-section

area of a ITO/PBO+MWNT/Al LED.

Transmission electron micrographs of a free-standing film


Measurement of photoelectric features
Measurement of photoelectric features

Photoluminescence system

He-Cd Laser

UV-Vis Absorption Spectrum

Hitachi U-3501 dual-beam



I v measurement
I-V Measurement

Kiethley2400


I v measurement1
I-V Measurement

Decrease of threshold voltage (Vth) for single-layer ITO/PBO + MWNT/Al LEDs as MWNT content increased

Current–voltage response of single-layer ITO/PBO + MWNT/Al light emitting diodes.


Electroluminescence emission intensity
Electroluminescence emission intensity

Electroluminescence emission spectra of single-layer ITO/PBO + MWNT/Al

light emitting diodes at a bias voltage of 9 V as a function of MWNT content.


Conclusion
Conclusion

  • MWNT and PBO did not have overlapping electron orbitals affecting their energy gaps

  • Up to 0.1 wt% of MWNTs, the diode emission

    current increased by about two orders of magnitude over those of the diodes without MWNT

  • Increase of MWNT concentration caused a successive decrease in electroluminescence emission intensity, that was attributed to a quench effect from aggregation of MWNTs


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