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Single electron Transport in diluted magnetic semiconductor quantum dots

Single electron Transport in diluted magnetic semiconductor quantum dots. J. Fernández-Rossier, R. Aguado. Department of Applied Physics, U. Alicante SPAIN Material Science Institute of Madrid, CSIC SPAIN. CdTe+1 Mn. Gate Tuning Anisotropy. Spin dependent Capacitance.

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Single electron Transport in diluted magnetic semiconductor quantum dots

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  1. Single electron Transport in diluted magnetic semiconductor quantum dots J. Fernández-Rossier, R. Aguado Department of Applied Physics, U. Alicante SPAIN Material Science Institute of Madrid, CSIC SPAIN CdTe+1 Mn Gate Tuning Anisotropy Spin dependent Capacitance www.ua.es/personal/jfrossier/ Z19-1

  2. GaMnAs Single electron transistor cond-mat/0602608 Coulomb blockade anisotropic magnetoresistance: Single electronics meets spintronicsAuthors:J. Wunderlich et al.

  3. Y. Léger et al., PRL 95, 047403 (05) L. Besombes et al. PRL93, 207403(04) Single ExcitonSpectroscopy Mn(2+) S=5/2 2S+1=6 PL Intensity 1 Mn per dot www.ua.es/personal/jfrossier/

  4. Heisenberg ST=Se+M Mz Ising

  5. Single exciton spectroscopy (1 Mn dot) EXPERIMENTS: Y. Léger et al. PRL 95, 047403 (05) WE UNDERSTAND e+h+Mn THEORY: J. Fernández-Rossier,PRB73, 045301 (06)

  6. Theory I: The dot STATES NUMERICAL DIAGONALIZATION STATES WITH a FIXED NUMBER of CARRIERS (Controlled By Gate Voltage)

  7. GATE CONTROL of Magnetic Anisotropy ST Mz Ising Heisenberg ZXX Free HH LH Q=-1 Q=0 Q=+1 Q=+3

  8. Theory: Single electron transport Density matrix (Vg, Vb) MASTER EQUATION Scattering Rates

  9. CHARGING the dot E Q=2 Q=1 Q=0 VG Q G Q=2 Q=1 Q=0 VG

  10. CHARGING the dot Spin dependent CHARGING ENERGY 3 PEAKS instead of 1 !! S=2 S=3

  11. E VG

  12. E VG

  13. E VG

  14. E Q=0 VG

  15. E Q=1/3 VG

  16. E Q=2/3 VG

  17. E Q=3/3 VG

  18. Inelastic single spin spectroscopy

  19. CONCLUSIONS Electric Tuning of magnetic anisotropy SPINconditional charging energy Q=+1 Q=+3 Mz Ising ZXX www.ua.es/personal/jfrossier/

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