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Broader Impacts:

Soft Materials Nanoscience Glenn H. Fredrickson, University of California-Santa Barbara, DMR 0904499. The ability to manipulate systems on nanometer length scales is enabling significant advances in the science and technology of materials.

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Broader Impacts:

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  1. Soft Materials NanoscienceGlenn H. Fredrickson, University of California-Santa Barbara, DMR 0904499 The ability to manipulate systems on nanometer length scales is enabling significant advances in the science and technology of materials. Our group is developing computer simulation tools to study a wide range soft materials systems including polymers, surfactants, and composite systems of polymers with embedded nanoparticles. Our methods are based on field theory models that embed realistic polymer architectures and segmental interactions in a rigorous statistical mechanics framework. In the area of nano-composites, we are investigating the ways in which organic polymers can be structured around inorganic particles, e.g. metals and semiconductors, which will allow for great flexibility in orienting and organizing particles within a composite. This will provide access to a broad range of unique optical, electronic, and mechanical properties that have heretofore been difficult or impossible to achieve. Top: Transmission electron microscopy images of symmetric PS-P2VP block copolymer droplets prepared without (left) and with (right) surface neutralizing nanoparticles. Courtesy of S.G. Jang, UCSB MRSEC. Bottom: Similar “nano-onion” and “nano-football” structures as predicted by field theory simulations in the Fredrickson group.

  2. Soft Materials NanoscienceGlenn H. Fredrickson, University of California-Santa Barbara, DMR 0904499 a. b. Broader Impacts: Our project has been leveraged through the UCSB Complex Fluids Design Consortium, which brings together scientists and engineers from industry and national laboratories with modeling and simulation experts at UCSB. A current focus is on the “directed self assembly” (DSA) of block copolymers to pattern microelectronic devices on 10 nm length scales. In collaboration with Intel, IBM, and Dow Chemical we are conducting simulations to identify successful DSA strategies that will minimize defects in a variety of industry-relevant structures and motifs. www.mrl.ucsb.edu/mrl/research/cfdc d. c. An important current challenge in microelectronics patterning is the “hole shrink problem,” namely how to reduce the diameter of a cylindrical vertical wire to the range of 10-20 nm. Images a-c above show field theory simulations of cylinder-forming AB block copolymer confined to a 30-100 nm cylindrical photoresist pre-pattern with A-selective sidewalls and neutral top and bottom surfaces. Image a has a pre-pattern diameter commensurate with the block polymer and shows a single vertical cylinder of the type and size targeted. Images b and c are examples of undesirable defect structures in incommensurate systems. Image d is an exotic “gear” structure in an “undirected” pre-pattern with neutral side walls.

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