Energy Efficiency Lighting Sponsor :

1. Presentation by: Jack Ko, CTS Deputy Director Renesola Ltd. Virtus® modules From Superior Ingot to Excellent Modules Energy Efficiency Lighting Sponsor:

2. Outline Introduction of Virtus® Wafer manufacture Characteristics of Virtus® I module Characteristics of Virtus® II module Summary

3. Introduction of Various Ingot Growth Methods  Directional Solidification System (DSS) provides a solution of high productivity and lower production cost. Cz method has advantage of excellent quality wafer, but with high production cost.  Controlled DSS combines the advantages of high productivity, high quality and lower production cost

4. Characteristics of Virtus® I Modules (Compared to Mono Modules) Lower LID (Light Induced Degradation), Lower power loss in higher temperature, Cost reduction (wafer and cell cost), Identical power output, Virtus® I module Mono module

5. Comparisonbetween Virtus® I and Mono Ingot (Innovative improvement of ingot growth) Mono-wafer has higher efficiency, oxygen concentration which cause high LID due to the high recombination of the B-O complex. Virtus® wafer has high cell efficiency, low oxygen concentration, and low LID.

6. Performance between Virtus® I and Mono Cells Light induced degradation (%) Temperature coefficient of power (%/oC) Lower oxygen concentration creates less B-O complex in Virtus wafer. Lower temperature coefficient of power and light induced degradation.

7. Comparison of Module Performance

8. Characteristics of Virtus® II Module(Compared to Multi Modules) Higher power output, Higher performance with the same cost, The same LID, The same CTM loss,

9. Comparison between Virtus® II and Multi Ingot (Innovative improvement of ingot growth)  Ingot growth modification improves the uniformity of the grain size and preferred orientation.

10. Results of Ingot Growth Conventional multi-ingot Virtus® II ingot • Conventional multi-ingot has disadvantage of poor grain distribution and low-lifetime. • Virtus® ingot improves the distribution of grain size and lifetime. • Virtus® ingot provides higher lifetime and lower dislocation density.

11. Differences of Wafer Appearance Multi-wafer  Many regions contain dislocation and microcrystalline Nonuniform distribution Virtus® A++ wafer  Uniform grain distribution with less defects Multi –crystalline wafer Virtus® A++ wafer

12. EL images betweenMulti- and Virtus® II Cells Multi-crystalline cells Virtus® II cells Efficiency~17.6% Efficiency~17.0%  The EL images shows that the multi-crystalline wafer has many defects.  Virtus® A++ wafer has much lower defects.

13. Comparison of Module Performance

14. Summary Major defects of conventional multi-crystalline wafers can be reduced by the innovative controlled DSS method Virtus® I module provides better temperature coefficient of power and lower light induced degradation compared to mono modules Virtus® II wafer increases cell efficiency due to higher lifetime, lower dislocation and uniform grain size. Virtus® II module shows better performance and the same production cost of multi module.

16. Advanced Power Warranty-Virtus I –plus & Virtus II –plus modules • For Virtus series module series • To reduce LID, we add a new sorting criteria for customer to reduce LID issue. • Positive tolerance range from (0W to +5W) to (+5W to +10W) • New Power Warranty standard • From 90% (10yr) and 80% (25yr) to 92% (10yr) and 82% (25yr) • +2% total output guarantee for 25 yrs.