Pertemuan 2 karakteristik kelistrikan gerbang mosfet
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Pertemuan 2 Karakteristik Kelistrikan Gerbang MOSFET. Matakuliah: H0362/Very Large Scale Integrated Circuits Tahun: 2005 Versi: versi/01. Learning Outcomes. Pada Akhir pertemuan ini, diharapkan mahasiswa akan dapat menunjukkan karakteristik kelistrikan gerbang MOSFET. MOS Fisik.

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Pertemuan 2 Karakteristik Kelistrikan Gerbang MOSFET

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Pertemuan 2 karakteristik kelistrikan gerbang mosfet

Pertemuan 2Karakteristik Kelistrikan Gerbang MOSFET

Matakuliah: H0362/Very Large Scale Integrated Circuits

Tahun: 2005

Versi: versi/01


Learning outcomes

Learning Outcomes

Pada Akhir pertemuan ini, diharapkan mahasiswa akan dapat menunjukkan karakteristik kelistrikan gerbang MOSFET.


Mos fisik

MOS Fisik

+ VG Gate voltage

Bentuk fisik

Gate

tox

Gate oxide

Silicon surface

+ VG > 0

p-type substrate

Silicon surface

QS surface charge

p-type


Pertemuan 2 karakteristik kelistrikan gerbang mosfet

Gate

Gate

Gate oxide

Source

n+

n+

Source

Drain

n+

n+

Drain

L

p-substrate

Tampak samping

Tampak atas

nFET

Bentuk fisik

3 dimensi


Pertemuan 2 karakteristik kelistrikan gerbang mosfet

G

+

VGSn

-

IDn

S

D

-

VDSn

+

n+

n+

VDSn

L

VGSn

-

Simbol

+

p-substrate

IDn

G

S

D

nFET

Arus dan tegangan

Struktur


Pertemuan 2 karakteristik kelistrikan gerbang mosfet

VGSn < VTn

VDSn

VGSn> VTn

VGSn > VTn

kanal

VDSn

-

+

-

+

IDn = 0

IDn mengalir

n+

n+

Source

Drain

Qe

G

S

D

G

S

D

VGSn VTn

n+

n+

n+

n+

n+

n+

p-substrate

p-substrate

Active

Source

Drain

Cut off

Qe = 0

CUT off

Active

nFET

Pengaturan kanal


Pertemuan 2 karakteristik kelistrikan gerbang mosfet

IDn

IDn

+

VDSn = VDD

Cutoff Active

+

VGSn

-

-

VGSn

0

VTn

IDn

IDn

+

saturation

non

saturation

+

VDSn

VGSn > VTn

VDSn

0

-

-

Vsat

nFET

I-V characteristics

I-V fungsi VGSn

I-V fungsi VDSn


Pertemuan 2 karakteristik kelistrikan gerbang mosfet

-4

x 10

6

VGS= 2.5 V

5

Resistive

Saturation

4

VGS= 2.0 V

3

(A)

VDS = VGS - VT

D

I

2

VGS= 1.5 V

1

VGS= 1.0 V

0

0

0.5

1

1.5

2

2.5

V

(V)

DS

nFET

I-V characteristics

IDn

VDSn


Pertemuan 2 karakteristik kelistrikan gerbang mosfet

G

Rn

S

D

CD

CS

G

CGS

CGD

D

S

CDB

CSB

nFET

CDB

RC model

CGS

CGD

CSB

n+

n+

Gate

Physical visualization

Linier model

Symbol diagram


Pertemuan 2 karakteristik kelistrikan gerbang mosfet

Gate

Gate

p+

p+

n  p

p  n

n+

n+

n-well

p-substrate

VSDp

-

+

G

-

p-substrate

nFET

+

IDp

VSGp

pFET

-

G

S

D

+ VDD

S

D

-

+

p+

p+

n-well

IDp

VSDp

n-well

p-substrate

pFET

Simbol

Struktur


Pertemuan 2 karakteristik kelistrikan gerbang mosfet

IDp

+

VSFp

+

-

VSDp = VDD

Cutoff Active

-

IDn

VSGp

0

VTn

VSGp> |VTn|

VSGp |VTn|

-

-

+

+

-

-

IDp

IDp = 0

VSDp

VSDp

G

S

S

+ VDD

G

S

S

+ VDD

p+

p+

p+

p+

n-well

n-well

n-well

n-well

p-substrate

p-substrate

Active

Cutoff

pFET

I-V characteristics


Dc inverter

Vout

MP ON, Mn OFF

VOH = VDD

Vout = Vin

VM

x

x x

x

Mn ON, Mp OFF

0 1

1 0

VOH = 0

VDD

VDD

VDD

0

1

VM

OFF

ON

ON

OFF

VIH

VIL

+

+

+

+

Vin = VDD

Vin = 0

Vout = VDD

Vout = 0

-

-

-

-

DC Inverter

Low input voltage

High input voltage


Pertemuan 2 karakteristik kelistrikan gerbang mosfet

VDD

Vin

t

tf

tr

VDD

Vout

t

VDD

t2

t1

Mn

Mp

VDD

+

+

Rp

Vin

Vout

CDp

-

-

+

+

CDn

Vin

Vout

-

-

Rn

Inverter circuit

DC Inverter

Switching characteristics

RC switch model


Pertemuan 2 karakteristik kelistrikan gerbang mosfet

Rangkaian

CMOS

Power Dissipasi

VDD

IDD

P = VDD IDD

P = PDC + Pdyn

PDC: daya arus searah

Pdyn: daya akibat aktifitas switching


Resume

RESUME

  • Bentuk fisik dan karakteristik nFET dan pFET.

  • Karakteristik DC inverter.

  • Karakteristik switch inverter.

  • Power dissipasi


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