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Pertemuan 2 Karakteristik Kelistrikan Gerbang MOSFET

Pertemuan 2 Karakteristik Kelistrikan Gerbang MOSFET. Matakuliah : H0362/Very Large Scale Integrated Circuits Tahun : 2005 Versi : versi/01. Learning Outcomes. Pada Akhir pertemuan ini, diharapkan mahasiswa akan dapat menunjukkan karakteristik kelistrikan gerbang MOSFET. MOS Fisik.

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Pertemuan 2 Karakteristik Kelistrikan Gerbang MOSFET

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  1. Pertemuan 2Karakteristik Kelistrikan Gerbang MOSFET Matakuliah : H0362/Very Large Scale Integrated Circuits Tahun : 2005 Versi : versi/01

  2. Learning Outcomes Pada Akhir pertemuan ini, diharapkan mahasiswa akan dapat menunjukkan karakteristik kelistrikan gerbang MOSFET.

  3. MOS Fisik + VG Gate voltage Bentuk fisik Gate tox Gate oxide Silicon surface + VG > 0 p-type substrate Silicon surface QS surface charge p-type

  4. Gate Gate Gate oxide Source n+ n+ Source Drain n+ n+ Drain L p-substrate Tampak samping Tampak atas nFET Bentuk fisik 3 dimensi

  5. G + VGSn - IDn S D - VDSn + n+ n+ VDSn L VGSn - Simbol + p-substrate IDn G S D nFET Arus dan tegangan Struktur

  6. VGSn < VTn VDSn VGSn> VTn VGSn > VTn kanal VDSn - + - + IDn = 0 IDn mengalir n+ n+ Source Drain Qe G S D G S D VGSn VTn n+ n+ n+ n+ n+ n+ p-substrate p-substrate Active Source Drain Cut off Qe = 0 CUT off Active nFET Pengaturan kanal

  7. IDn IDn + VDSn = VDD Cutoff Active + VGSn - - VGSn 0 VTn IDn IDn + saturation non saturation + VDSn VGSn > VTn VDSn 0 - - Vsat nFET I-V characteristics I-V fungsi VGSn I-V fungsi VDSn

  8. -4 x 10 6 VGS= 2.5 V 5 Resistive Saturation 4 VGS= 2.0 V 3 (A) VDS = VGS - VT D I 2 VGS= 1.5 V 1 VGS= 1.0 V 0 0 0.5 1 1.5 2 2.5 V (V) DS nFET I-V characteristics IDn VDSn

  9. G Rn S D CD CS G CGS CGD D S CDB CSB nFET CDB RC model CGS CGD CSB n+ n+ Gate Physical visualization Linier model Symbol diagram

  10. Gate Gate p+ p+ n  p p  n n+ n+ n-well p-substrate VSDp - + G - p-substrate nFET + IDp VSGp pFET - G S D + VDD S D - + p+ p+ n-well IDp VSDp n-well p-substrate pFET Simbol Struktur

  11. IDp + VSFp + - VSDp = VDD Cutoff Active - IDn VSGp 0 VTn VSGp> |VTn| VSGp |VTn| - - + + - - IDp IDp = 0 VSDp VSDp G S S + VDD G S S + VDD p+ p+ p+ p+ n-well n-well n-well n-well p-substrate p-substrate Active Cutoff pFET I-V characteristics

  12. Vout MP ON, Mn OFF VOH = VDD Vout = Vin VM x x x x Mn ON, Mp OFF 0 1 1 0 VOH = 0 VDD VDD VDD 0 1 VM OFF ON ON OFF VIH VIL + + + + Vin = VDD Vin = 0 Vout = VDD Vout = 0 - - - - DC Inverter Low input voltage High input voltage

  13. VDD Vin t tf tr VDD Vout t VDD t2 t1 Mn Mp VDD + + Rp Vin Vout CDp - - + + CDn Vin Vout - - Rn Inverter circuit DC Inverter Switching characteristics RC switch model

  14. Rangkaian CMOS Power Dissipasi VDD IDD P = VDD IDD P = PDC + Pdyn PDC: daya arus searah Pdyn: daya akibat aktifitas switching

  15. RESUME • Bentuk fisik dan karakteristik nFET dan pFET. • Karakteristik DC inverter. • Karakteristik switch inverter. • Power dissipasi

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