1 / 14

Thyristors (SCRs)

Lecture Notes. Thyristors (SCRs). OUTLINE • SCR construction and I-V characteristics. • Physical operation of SCRs. • Switching behavior of SCRs • dv/dt and di/dt limitations and methods of improving them. • SCR drive circuit considerations. Thyristor (SCR) Geometry.

dawn-mack
Download Presentation

Thyristors (SCRs)

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. Lecture Notes Thyristors (SCRs) OUTLINE • SCR construction and I-V characteristics. • Physical operation of SCRs. • Switching behavior of SCRs • dv/dt and di/dt limitations and methods of improving them. • SCR drive circuit considerations.

  2. Thyristor (SCR) Geometry • Cross-sectional view showing vertical orientation of SCR. • SCRs with kiloamp ratings have diameters of 10 cm or greater. Gate and cathode metallization for slow (phase control) thyristor. Gate and cathode metallization for fast (inverter grade) SCR

  3. Thyristor I-V Characteristics Thyristor circuit symbol.

  4. SCR Model and Equivalent Circuit One dimensional SCR model. Two transistor equivalent circuit

  5. Thyristor Turn-on Process

  6. Thyristor On-state Latchup SCR with negative gate current

  7. Thyristor On-state Operation

  8. Thyristor Turn-on Behavior

  9. Thyristor Turn-off Behavior Turn-off waveforms

  10. Thyristor di/dt Limit at Turn-on • Use shaped gate current pulse for rapid turn-on.

  11. Thyristor Re-applied dv/dt Limits Rate effect

  12. Methods of Improving Thyristor di/dt Rating • Interdigitated gate-cathode structure used to greatly increase gate-cathode periphery. • Distance from periphery to center of any cathode region significantly shortened. • Ability of negative gate current to break latching condition in on-state increased. • Combination of pilot thyristor, diode, and iterdigitated gate-cathode geometry tgermed a gate-assisted turn-off thyristor or GATT • Use of pilot thyristor to increase turn-on gate current to main thyristor. • Larger gate current increases amount of initial conducting area of cathode and thus improves diF/dt capabiities. • Diode allowes negative gate current to flow from main SCR.

  13. Improvement in dv/dt Rating Via Cathode Shorts

  14. Thyristor Gate Trigger Requirements Equivalent circuit of SCR drive circuit

More Related