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EQUIPE SYSTEMES DE COMMUNICATION ET MICROSYSTEMES : ESYCOM / EA 2552

EQUIPE SYSTEMES DE COMMUNICATION ET MICROSYSTEMES : ESYCOM / EA 2552 COMMUNICATION SYSTEMS AND MEMS TEAM C. Rumelhard. SUMMARY. 1 – Origin of ESYCOM 2 – Configuration of ESYCOM 3 – An example of item: Microwave Photonics 4 – Synthesis and prospects. 1 – Origin of ESYCOM.

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EQUIPE SYSTEMES DE COMMUNICATION ET MICROSYSTEMES : ESYCOM / EA 2552

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  1. EQUIPE SYSTEMES DE COMMUNICATION ET MICROSYSTEMES : ESYCOM / EA 2552 COMMUNICATION SYSTEMS AND MEMS TEAM C. Rumelhard ESYCOM 5 avril 2005 C. R.1

  2. SUMMARY 1 – Origin of ESYCOM 2 – Configuration of ESYCOM 3 – An example of item: Microwave Photonics 4 – Synthesis and prospects ESYCOM 5 avril 2005 C. R.2

  3. 1 – Origin of ESYCOM • 1994: Master High Frequency Communication Systems, • cooperation: UMLV, CNAM, ESIEE, INT Evry • 1996: High FrequencyElectronicsPole with CNAM, ESIEE, UMLV in Marne la Vallée • Jan. 2000: Label for 2 years as “Equipe d’accueil” by french Research Ministry under the name: Equipe Systèmes de Communication, ESYCOM • Jan. 2002: new label for 2 years ESYCOM 5 avril 2005 C. R.3

  4. 1 – Origin of ESYCOM • in 2003: association with MEMS team of ESIEE • => Equipe Systèmes de Communication et Microsystèmes, ESYCOM • Jan. 2004: label for 2 years • Oct. 2005: cooperation with french CNRS in a « Groupement d’Intérêt • Scientifique » • Oct. 2005: label for 4 years (2006-2009) ESYCOM 5 avril 2005 C. R.4

  5. 2 – Configuration of ESYCOM Research items • Electromagnetism and applications, UMLV, ESIEE • Digital wireless communications, ESIEE • Microsystems and microtechnologies, ESIEE, CNAM, UMLV • Photonics and microwaves, CNAM, ESIEE, UMLV High Frequency Measurements • Antennas, Propagation and EMC, UMLV • Characterisation of circuits and digital communication systems in microwaves and optics, ESIEE • Photonics and microwave characterisation, CNAM MEMS technology, ESIEE ESYCOM 5 avril 2005 C. R.5

  6. 2 – Configuration of ESYCOM Research items 1 - Electromagnetism and applications UMLV, ESIEE - Numerical computations for electromagnetism - Antennas and networks - EMC, propagation and mastering of hertzianchannel 2 – Digital Wireless Communications ESIEE - Transmitter/Receiver architectures - Signal and image coding 3 - Microsystems (MEMS) and technology ESIEE, CNAM, UMLV - Sensors, actuators and associated electronics - RF and optical MEMS 4 - Photonics and microwaves CNAM, ESIEE, UMLV - Microwave circuits and links in optics - Photonics and microwave components ESYCOM 5 avril 2005 C. R.6

  7. 2 – Configuration of ESYCOM • 4 research items • 34 teachers-researchers • 29 Ph D • 5 technicians/engineers • 15 Ph D passed since 2000 • 3 measurement equipments • MEMS technology ESYCOM 5 avril 2005 C. R.7

  8. 2 – Configuration of ESYCOM Human resources ESYCOM 5 avril 2005 C. R.8

  9. T6 10% T1 37% T5 7% T4 13% T2 23% T3 10% 2 – Configuration of ESYCOM 29 Ph D: T1 : French research ministry funding T2 : Cifre funding T3 : R/D contracts T4 : Foreign affairs ministry, foreign government funding T5 : Institutions or industry funding T6 : Others ESYCOM 5 avril 2005 C. R.9

  10. 2 – Configuration of ESYCOM Main activities • European network of excellence: Network of Excellence in broadband • Fiber Radio Techniques and its Integration Technologies: NEFERTITI • European network of excellence: Antenna Center of Excellence: ACE • 3 french RNRT (National Research Network in Telecommunications) contracts • 3 ANVAR contracts • 1 CNES contract • 1 CNRS contract • 1 ACI –Ville contract • etc… ESYCOM 5 avril 2005 C. R.10

  11. 2 – Configuration of ESYCOM • Main activities • Organisation of Europan Microwave Week in Oct. 2000 in Paris La Défense: • 3 conferences, 11 workshops, 3 short courses, 1 exhibition • 2000 registrations conf. and workshops, 1300 visitors of exhibition, • 38 countries • Organisation of 3 Summer Schools on “RF and Microwave Systems” • - Sept. 2001: Architectures for RF systems (ESIEE) • - Sept. 2002: Mastering of hertzian channel with several communication systems (UMLV) • - March 2004: Advanced design of MMICs for millimeter waves, photonic and multifunction applications (CNAM) ESYCOM 5 avril 2005 C. R.11

  12. 2 – Configuration of ESYCOM Publications ESYCOM 5 avril 2005 C. R.12

  13. 3 – An example of item: microwave photonics • 3 professors, 2 lecturers, 4 passed Ph D, • 5 Ph D, 5 Engineer diploma memoires • Why microwave photonic links? • Signal distribution in phased array antennas : • commercial satellites or military planes. A few metres. • Radio over fiber. Few km for microwaves over optics and a few tens of meters for hertzian microwave link • Optical distribution of a signal in very high bit rate electronic systems. A few m or a few tens of m. ESYCOM 5 avril 2005 C. R.13

  14. ESYCOM 5 avril 2005 C. R.14

  15. ESYCOM 5 avril 2005 C. R.15

  16. Enjeux des systèmes de Défense Antennes conformes multifonctions distribuées Choix de systèmes reconfigurables à antennes actives conformes distribuées multi-faisceaux & multifonctions (antenne partagée: R/GE/Coms) Les technologies Optoélectronique et Hyperfréquence doivent être intimement liées pour jouer un rôle stratégique dans les systèmes futurs ESYCOM 5 avril 2005 C. R.16

  17. ESYCOM 5 avril 2005 C. R.17

  18. Near future: high bit rate optical connections 2 à 5 years: Card to card communications 5 à 10 years: Chip to chip communications ESYCOM 5 avril 2005 C. R.18

  19. 3 – An example of item: microwave photonics Circuits for microwave photonic links • Establishment of a library of models to simulate a complete • microwave photonic link with a non linear frequency domain simulator • ( ADS). Many simulations in gain, noise and non linearities of • microwave photonic links (3 CNAM memoires + part of a thesis) • ESYCOM + Thales Airborne Systems ESYCOM 5 avril 2005 C. R.19

  20. Direct modulation Intensity Modulation Direct Detection Optical fiber laser photo-détector l = 1,55 ou 1,3 ou 0,8 µm Low noise ampli ampli driver RF RF external modulation I M modulator MZ ou EA D D Optical fibre laser photo-détector l = 1,55 ou 1,3 ou 0,8 µm Low noise ampli ampli driver RF RF Microwave optical links ESYCOM 5 avril 2005 C. R.20

  21. Optical link biasing current : 22 mA modulation current: 0.1 mA frequency: 0 - 20 GHz Laser diode 50 km Optical Fibre Photodiode ESYCOM 5 avril 2005 C. R.21

  22. Optical link Laser diode Optical fibre Photodiode Laser output ESYCOM 5 avril 2005 C. R.22

  23. Optical link Laser diode Optical Fibre (50 km) Photodiode optical fibre output ESYCOM 5 avril 2005 C. R.23

  24. Optical link Laser diode Optical fibre (50 km) Photodiode Photo-current: ESYCOM 5 avril 2005 C. R.24

  25. Optical link Laser diode Optical fibre (50 km) Photodiode Output on 50 : ESYCOM 5 avril 2005 C. R.25

  26. 3 – An example of item: microwave photonics Circuits for microwave photonic links • Opto amplifier at 30 GHz with InP/GaInAs heterojunction • phototransistors (HPT) (Ph D) • Design: ESYCOM with our HPT models • Technology: OPTO+ Marcoussis • Measurements: LEST Brest ESYCOM 5 avril 2005 C. R.26

  27. Opto amplificateur à 30 GHz en technologie TBH InP OPTO+ Microondes 30 GHz Optique modulée R0 Cd Cd Vbe3 Vbe2 C1 C3 Rd C2 Rd PV4E T51030 L2 L3 /4 L1 Vbe4 Cd Vce3 Vce1 Vce3+4 Cd Cd Vbe1 Cd ESYCOM 5 avril 2005 C. R.27

  28. 3 – An example of item: microwave photonics Circuits for microwave photonic links • Broad band distributed preamplifier 0,2 to 20 GHz for photodiode • (CNAM memoire) • Design: ESYCOM + Ferdinand Braun Institut für • Höchstfrequenztechnik Berlin • Technology: UMS Orsay-Ulm • Measurements: ESYCOM ESYCOM 5 avril 2005 C. R.28

  29. 3 – An example of item: microwave photonics Circuits for microwave photonic links • Modulator (up converter) at 30 GHz (Ph D + patent) • Design: ESYCOM • Technology HFET: UMS Orsay-Ulm • Measurement: ESYCOM ESYCOM 5 avril 2005 C. R.29

  30. 3 – An example of item: microwave photonics Circuits for microwave photonic links • Frequency tripler 12,66-38 GHz (Ph D) • Design: ESYCOM • HFET technology : OMMIC Limeil Brévanne • Measurements: ESYCOM + Agilent Palo Alto • Chipset for transmitter and receiver of UWB signals (3,6-10,7 GHz) • (Ph D) • Design: ESYCOM • Technology: UMS Orsay-Ulm • Measurements: ESYCOM + ENSTA Paris ESYCOM 5 avril 2005 C. R.30

  31. Monocycle wavelet generator Generation of monocycle pulses with differential pairs of transistors ESYCOM 5 avril 2005 C. R.31

  32. Monocycle generator: input and output signals Rectangular signal applied at the input of the pulse generator Series of generated monocycle pulses ESYCOM 5 avril 2005 C. R.32

  33. 3 – An example of item: microwave photonics Microwave photonic components • InP/GaInAs heterojunction phototransistor (HPT) (Ph D) • Numerical and physical simulations of semiconductor • devices in finite differences : ESYCOM • Measuremens: OPTO+ Marcoussis, LEST Brest, ESYCOM • New concepts (optoelectronic S parameters) for optoelectronic modelling of a HPT: ESYCOM ESYCOM 5 avril 2005 C. R.33

  34. Description of InP/GaInAs HPTs InP/GaInAs HPT realized by OPTO + Window in the base Emitter Emitter Emitter Optical beam Optical beam n n n - - - InP InP InP Base Base Base p p p - - - InGaAs InGaAs InGaAs n n n - - - InGaAs InGaAs InGaAs Collector Collector Collector InP InP InP Sub Sub Sub - - - Collector Collector Collector C. Gonzalez, “HBT Phototransistor as an Optical Millimeter wave Converter - Part I: the Device”, part 5.3 of a book entitled: “Microwave Photonics: From Components to Applications and Systems”, Edited by Vilcot, Cabon, Chazelas, Kluwer Academic Publishers, The Netherlands, in print – to be published in 2003 ESYCOM 5 avril 2005 C. R.34

  35. Description of InP/GaInAs HPTs InP/GaInAs HPT realized by OPTO + Emitter Emitter Emitter Optical beam Optical beam n - InP n n - - InP InP Base Base Base In In Ga Ga As As N N – – 1.10 1.10 cm cm ++ ++ 19 19 - - 3 3 0.53 0.53 0.47 0.47 p - InGaAs p p - - InGaAs InGaAs Either abrupt(PV4D) 50nm: N 50nm: N – – 2.10 2.10 cm cm 17 17 - - 3 3 InP InP n - InGaAs n n - - InGaAs InGaAs In In Ga Ga As As 60nm: P 60nm: P – – 2.10 2.10 cm cm + + 19 19 - - 3 3 Collector Collector Collector 0.53 0.53 0.47 0.47 Or gradual(PV4E) InP InP InP Sub Sub Sub - Collector - - Collector Collector 500nm: N 500nm: N 1.1016 – – cm 1.10 cm 16 16 - - -3 3 In In Ga Ga As As 0.53 0.53 0.47 0.47 500nm: N 500nm: N – – 1.10 1.10 cm cm ++ ++ 19 19 - - 3 3 InP InP • Absorption of light in base and collector • Source of photonic current comes mainly from BC depleted zone ESYCOM 5 avril 2005 C. R.35

  36. Simulation physique (différences finies 2D) de PTH InP/GaInAs optique modulée ESYCOM 5 avril 2005 C. R.36

  37. Popt C C B IAV RC E Icni ICC X.CjC Vopt .Vopt (1-X).CjC B IcN Ict Rb1 Rb2 CjE IbN IEC IEni POUT RE E HPT large signal model • modulated light • microwave response • noise • thermal behaviour ESYCOM 5 avril 2005 C. R.37

  38. 3 – An example of item: microwave photonics Microwave photonic components • Si/SiGe phototransistor (Ph D) • Physical simulation and design: ESYCOM • Technology: Atmel Heilbronn through Université of Ulm • Microwave measurements : IEF Orsay • Optoelectronic measurements: ESYCOM • First world result for a Si/SiGe HPT • Comparison with other teams in the world (Germany, France, • Israel, Taïwan, USA) in a workshop organised by ESYCOM in • Budapest in Sept. 2003in association with an IEEE Topical Meeting • on Microwave Photonics • For a Si/SiGe HPT, a team of the University of Taïwan began with a • MQW structure and recently switched to our solution. ESYCOM 5 avril 2005 C. R.38

  39. Description of Si/SiGe HPTs Designed by ESYCOM and Ulm University , realized by Atmel Heilbronn Window in the emitter Optical beam Optical beam Emitter Emitter Emitter Emitter Emitter Emitter Emitter Emitter n n n n - - - - Si Si Si Si Base Base Base Base p p p p - - - - SiGe SiGe SiGe SiGe Ge Ge Ge n n n n - - - - Si Si Si Si % % % Collector Collector Collector Collector Si Si Si Si Sub Sub Sub Sub - - - - Collector Collector Collector Collector J.L. Polleux, F. Moutier, A.L. Billabert, C. Rumelhard, E. Sönmez, H. Schumacher, “A Strained SiGe layer Heterojunction Bipolar Phototransistor for Short-Range Opto-Microwave Applications”, IEEE International Topical Meeting on Microwave Photonics, MWP2003, Budapest, Hungary, Sept. 2003 ESYCOM 5 avril 2005 C. R.39

  40. Description Si/SiGe HPTs Designed by ESYCOM and Ulm University , realized by Atmel Heilbronn N++– 2.1020cm-3 Si Optical beam 100nm: N – 3.1018cm-3 Emitter Emitter 10nm n-Si Base 30nm: P+– 2.1019cm-3 p-SiGe SiGe, 22% Ge % 20nm n-Si Collector 300nm: N – 4.1016cm-3 Si Sub-Collector Si N++– 2.1020cm-3 Absorption of light in base + a small part of emitter and collector (SiGe) but also in emitter and collector (Si) ESYCOM 5 avril 2005 C. R.40

  41. Measurements of GOM with InP and SiGe HPTs Opto-microwave gains with 50 ohms on bases and collectors InP @ 0.94 µm ESYCOM Physical simulation SiGe @ 0.85 µm 20 20 15 15 InP @ 1.55 µm LEST Brest 10 10 5 5 GOMor rHPTin dB 0 0 - 5 -5 - 10 -10 SiGe @ 0.94 µm ESYCOM - 15 -15 - 20 -20 8 9 10 1 10 F in GHz 0.1 10 10 10 ESYCOM 5 avril 2005 C. R.41

  42. 3 – An example of item: microwave photonics Microwave photonic components • Improving the frequency response of Si/SiGe PTH by a focalisation of • optical absorption in the base by optimisation of optical wavelength (Ph D) • Physical simulations : ESYCOM • Future technology : Atmel Heilbronn through University of Ulm ESYCOM 5 avril 2005 C. R.42

  43. Amélioration de la fréquence de coupure optique FTOPT d’un PTH en n’éclairant que la base FTOPT FTOPT ESYCOM 5 avril 2005 C. R.43

  44. Amélioration de la fréquence de coupure optique FTOPT d’un PTH en fonction de la longueur d’onde optique ESYCOM 5 avril 2005 C. R.44

  45. 3 – An example of item: microwave photonics Microwave photonic components • Improving the responsivity of a Si/SiGe by insertion in a horizontal • optical cavity constituted of adjustable Bragg reflectors (Ph D) • Optimisation of the number of blades of the Bragg reflector to • improve absorption: ESYCOM • MEMS Si technology for Bragg reflectors: ESYCOM ESYCOM 5 avril 2005 C. R.45

  46. Lateral cavity system Bragg reflector Si/air • Vertical Bragg reflectors, DRIE on Si substrate • Structure realized in ESYCOM/ESIEE • Lateral cavity with insertion of a photodiode • Lateral cavity with insertion of a • SiGe phototransistor Si/air Si SiO2/air Si/Ge ESYCOM 5 avril 2005 C. R.46

  47. Lateral cavity system: optimal structures • The maximum absorption of each structure 100 3 90 4 80 70 5 Max. Absorption 60 6 50 40 30 Si slab thickness (µm) 1st refl 1b. 20 2 b. 3 b. 4 b. 10 5 b. 6 b. 0 0 5 10 15 20 25 30 Slab thickness (µm) - Structure 3: 1st refl. 3b, 2nd refl. 13 is interesting ESYCOM 5 avril 2005 C. R.47

  48. 3 – An example of item: microwave photonics Microwave photonic components • Study of a phase shifter constituted of two coupled optical cavities • realized with Bragg reflectors (Ph D) • Design of adjustable micro-photonic circuit: • ESYCOM + IEF Orsay • Future realization with a MEMS technology on Si: ESYCOM ESYCOM 5 avril 2005 C. R.48

  49. Variable phase shifter with a double Braggreflector double cavity Technology MEMS ESYCOM Light out Coupled double cavity Wrib SiO2 Substrat : Si Light in ESYCOM 5 avril 2005 C. R.49

  50. CAVITY PHASE SHIFTER WITH BRAGG REFLECTORSApplication: Mach Zehnder modulator in micro-photonic circuit ESYCOM 5 avril 2005 C. R.50

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