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BioMEMS Chapter 2 electronic material processing

BioMEMS Chapter 2 electronic material processing. 2.1 Introduction. 電子材料是指用於 IC 製作中的材料,有一部份用作 MEMS 材料. 依結構分,電子材料分為: 基底材料( Bulk materials ) 矽( silicon ) 砷化鎵( gallium arsenide ) 薄膜材料( Thin film materials ) 熱氧化矽 ( Thermal silicon oxide ) 介電層 ( Dielectric layers )

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BioMEMS Chapter 2 electronic material processing

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  1. BioMEMSChapter 2 electronic material processing

  2. 2.1 Introduction • 電子材料是指用於IC製作中的材料,有一部份用作MEMS材料 依結構分,電子材料分為: • 基底材料(Bulk materials) • 矽(silicon) • 砷化鎵(gallium arsenide) • 薄膜材料(Thin film materials) • 熱氧化矽 (Thermal silicon oxide) • 介電層 (Dielectric layers) • 複晶矽(poly-Si)(Polycrystalline silicon) • 金屬膜(主要為鋁)(Metal film) 2.2 Electronic Materials and Their Deposition

  3. 2.2.1 Oxide Film Formation by Thermal Oxidation • 在矽晶圓上以熱氧化方式長出SiO2層 • 矽氧化反應: Si + O2 → SiO2 Si + 2H2O → SiO2 + H2 • 矽熱氧化裝置 • 氧化矽化學結構

  4. 2.2.3 Deposition of Silion Dioxide and Silicon Nitride • 一般在基板上形成薄膜有三種沉積方法(CVD) • 常壓化學氣相沉積(APCVD) • 低壓化學氣相沉積 (LPCVD) • 電漿輔助化學氣相沉積 (PECVD) • CVD反應 SiH4 + O2 → SiO2 + 2H2 SiCl2H2 + 2H2O → SiO2 + 2H2 + 2HCl 3SiCl2H2 + 4NH3 → Si3N4 + 6HCl + 6H2 • CVD裝置

  5. Step coverage: • CVD與熱氧化法比較

  6. 2.2.3 Polysilicon Film Deposition • Polysilicon 在MEMS中可作為結構材料或電極 • 化學反應 SiH4 → Si + 2H2 • 用於MEMS的電子材料

  7. 2.3 Pattern Transfer 2.3.1 The lithographic Process • Lithography:由罩幕(mask)轉印幾何圖案(pattern)到光阻(photoresist)

  8. 微影效能性質的三項參數: • 解析度(resolution) • 對準度(registration) • 產出(throughput) • 微影的光源: • UV • e-beam • X- ray • 圖案轉印方式: • Shadow printing • Projection Printing

  9. 2.3.2 Mask Formation • 罩幕圖案形成過程: • Layout • Mask level • Glass reticule • Final mask • 罩幕製作機 • 罩幕覆蓋材料 • 低解析度:選軟性材料 • 高解析度:選硬質材料

  10. 2.3.3 Resist • 光阻: • 正光阻 • 負光阻

  11. 光阻材料 • 形成光阻層的方法:spin coating • Lift-off teshique:以正光阻製作高解析度獨立元件

  12. 2.4 Etching Electronic Materials • Etching : 使材料顯現微影圖樣與結構的方法 • 濕式蝕刻(wet chemical etching) • 矽蝕刻 蝕刻液:HNO3/HF/H2O 反 應: Si + 2H+ → Si2+ + H2, H2O → (OH)- + H+ Si2+ +2(OH)- → Si(OH)2 → SiO2+H2 SiO2+6HF → H2SiF6 + 2H2O • 蝕刻製程的特性參數 • Etching rate • Etch selectivity • Etch uniformity

  13. 乾式蝕刻(dry etching) • 多晶矽蝕刻 蝕刻氣體:氯 反應: nCl → nCl+ + ne , e + Cl2 → 2Cl + e nCl => Si + nCl → SiCln • 蝕刻系統

  14. 2.5 Doping semiconductors • 蝕刻的方向性 • Doping的目的: • Doping的原子結構狀態:

  15. Doping材料 • Doping的方法 • 擴散(diffusion) • 離子佈植(Ion Implantation)

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