(b). (a). Fig. 1 Kuo et al. Fig. 2 . Kuo et al. (b). (a). Fig. 3 . Kuo et al. Fig. 4 . Kuo et al. Fig. 5 . Kuo et al. Schottky diode. TEM of epi Ge before PMA :. After PMA :. Pt Germanide. Ref :IEEE ELECTRON DEVICE LETTERS.
Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author.While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server.
Fig. 1 Kuo et al.
Fig. 3 . Kuo et al.
After PMA :
Ref :IEEE ELECTRON DEVICE LETTERS
JohnY. Spann, Student Member, IEEE, Robert A. Anderson, Student Member, IEEE, Trevor J. Thornton, Member, IEEE,
Gari Harris, Member, IEEE, Shawn G. Thomas, Member, IEEE, and Clarence Tracy
CalculatingΦBn by Reverse current :
Thermionic-field emission (Tunneling)
From Simulation :
nSi E-field~ 2e4 V/cm
Epi Ge E-field~ 3e6 V/cm
epi Ge with cap :
Program/erase performance is enhanced using high-k blocking oxide.
All high-k films are deposited by ALD.
After annealing treatment (1000oC, 10s) in N2 ambient, HfAlO
film shows partial crystalline, while HfO2 film shows fully
The Al2O3 film shows also partial crystalline.
C-V hysteresis memory window
Al gate electrode
Ramp rate: 0.1V/s
A good C-V hysteresis memory window of high-k charge trapping layers
is observed with high gate voltage.
The memory window is slightly lower ([email protected]=15V) as compared with
reported data ([email protected]=12V) on TaN/AlLaO3(12nm)/AlGaN(10nm)/SiO2
(2.7nm)/p-Si [A. Chin et al., 2005 IEDM Tech. Dig. P. 165].