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Radiation damage research

Radiation damage research. Florian Kassel, Moritz Guthoff , Anne Dabrowski, Wim de Boer. Outline. Introduction to TCT setup at KIT Extension of existing TCT setup Additional CCD measurement Alternating high voltage measurement Possibility to alternate CCD and TCT measurement

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Radiation damage research

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  1. Radiation damage research Florian Kassel, Moritz Guthoff, Anne Dabrowski, Wim de Boer

  2. Outline Introduction to TCT setup at KIT Extension of existing TCT setup • Additional CCD measurement • Alternating high voltage measurement • Possibility to alternate CCD and TCT measurement Plans for the near future: Irradiation study of a sCVD diamond Simulation of the electrical properties of diamond sensors DPG Tagung, Mainz 2014

  3. TCT measurements Diamond HV Sr90(1E7 Bq) BiasTee Scope 1 sample Amplifier Am241 50dB Hardware upgrade ICCE measurement With the transient current technique (TCT) pulse shapes are measured in order to determine the internal electric field. A radioactive α-source generates a signal which is amplified and send to a scope. Priming is done with a Sr-90 source. Single traces recorded with PC. Data averaging in post processing. DPG Tagung, Mainz 2014

  4. Hardware upgrade I: CCE Ø 1000samples Diamond HV trigger Sr90(1E7 Bq) Scintillator & PMT BiasTee Scope 1 sample Amplifier Am241 50dB Hardware upgrade ICCE measurement Hardware upgrade in order to measure the charge collection efficiency (CCE) of a MIP particle. MIP particle is generated by Sr90 and detected by additional Scintillator. Scintillator light is converted by photo multiplier into a trigger signal for the scope. Mean value of 1000 sample is used for CCE calculation. DPG Tagung, Mainz 2014

  5. Hardware upgrade II: Alternating high voltage Hardware upgrade II Alternating voltage Voltage amplifier Signalgenerator + x200 - Ø 1000samples Diamond HV trigger Sr90(1E7 Bq) Scintillator & PMT BiasTee Scope 1 sample Amplifier Am241 50dB Hardware upgrade ICCE measurement Signal generator and voltage amplifier are added to perform rectangular voltage measurements DPG Tagung, Mainz 2014

  6. Combined TCT & CCD measurements TCT(Transient Current Technique) CCE(Charge Collection Efficiency) CCE (MIP) is reduced After 30 min a stable Efficiency level is reaced Shape of electrical field changes After 30 min change of signal shape slows down DPG Tagung, Mainz 2014

  7. Constant -> alternating HV TCT(Transient CurrentTechnique) CCE(Charge Collection Efficiency) Electrical field constant for >50 h … • CCE(MIP) on constantlevel ~ 70 % • CCE(α – particle): ~80% DPG Tagung, Mainz 2014

  8. Irradiation study of a sCVD diamond • Stepwise irradiation(~5e12 neq/cm²) of a sCVD diamond till 5e13 neq/cm² • Proton irradiation performed at KIT (~23 MeV) • Systematic measurement of electrical field effects: • Transient current technique (TCT) • Charge collection efficiency (CCD) • Comparison of results with TCAD simulations DPG Tagung, Mainz 2014

  9. Simulation of electrical properties of diamond sensors (TCAD) TCAD:Tool to simulate the electrical, optical and thermal behavior of semiconductor devices Is used in CMS silicon strip community to simulate electrical properties of the sensors Simulation opportunities: Diamond sensors Bulk defects (traps) Electrical field Effect of MIP andα particle DPG Tagung, Mainz 2014

  10. First simulations results No MIP particle flux (except α particle) MIP particle flux (plus α particle) Sensor current after α particle impact Impact on cathode (anode) -> electron (hole) drift DPG Tagung, Mainz 2014

  11. Conclusions ! This presentation Is not yet Ready. DPG Tagung, Mainz 2014

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