Semiconductor physics devices
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SEMICONDUCTOR PHYSICS & DEVICES. 半導體元件物理. 參考書籍:. S.M.Sze ( 施敏 ) ……………… 教科書 SEMICONDUCTOR DEVICES Physics and Technology 2 nd Edition Donald A. Neamen SEMICONDUCTOR PHYSICS & DEVICES BASIC PRINCIPLES 2 nd Edition Hong Xiao Introduction to Semiconductor Manufacturing Technology

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SEMICONDUCTOR PHYSICS & DEVICES

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Semiconductor physics devices

SEMICONDUCTOR PHYSICS & DEVICES

半導體元件物理


Semiconductor physics devices

參考書籍:

  • S.M.Sze (施敏) ………………教科書

    SEMICONDUCTOR DEVICES Physics and Technology

    2nd Edition

  • Donald A. Neamen

    SEMICONDUCTOR PHYSICS & DEVICES BASIC PRINCIPLES

    2nd Edition

  • Hong Xiao

    Introduction to Semiconductor Manufacturing Technology

  • 莊達人編著

    VLSI製造技術 (五版修訂)


Semiconductor physics devices

評分標準

  • 期中考,期末考各佔 30%

  • 作業:20%

  • 報告:20%


Semiconductor physics devices

課程大綱

  • 第一章 簡介

  • 第二章 熱平衡時的能帶及載子濃度

  • 第三章 載子傳輸現象

  • 第四章 正 – 負接面

  • 第六章 金氧半場效電晶體及其相關元件

  • 第七章 金半場效電晶體及其相關元件

  • 第十章 晶體成長及磊晶

  • 第十一章 薄膜形成

  • 第十二章 微影與蝕刻

  • 第十三章 雜質摻雜

  • 第十四章 積體元件


Chap1 introduction

Chap1 Introduction

  • 1.1 Semiconductor Devices(半導體元件)

全球國民生產總值

GWP的20%

1998年

電子工業的20%


Semiconductor physics devices

元件的基礎結構

pn接面

金屬-半導體界面

金屬-氧化層-半導體結構

異質半導體接面


Semiconductor physics devices

金屬半導體界面-整流型接觸、歐姆接觸(最早,1874年)

應用:MESFET(金屬半導體電晶體)

閘極—整流型接觸

汲極及源極---歐姆接觸

  • pn接面 (半導體元件物理的基礎)

兩個pn接面可形成雙載子電晶體(BJT)

三個pn接面可形成閘流體(thyristor)(一種切換元件switching device)


Semiconductor physics devices

異質半導體界面

可製作高速元件及光電元件

例:GaAs和AlAs可形成異質接面

金氧半結構—即金屬氧化層界面+氧化層半導體界面

應用:

金氧半結構形成閘極

兩個pn接面形成汲極與源極

形成MOSFET


1 1 2

1.1.2 主要的半導體元件

(發光二極體)

太陽電池

穿隧二極體

雷射

轉移電子二極體

衝渡二極體


Semiconductor physics devices

主要的半導體元件(續)

非揮發性半導體記憶體

電荷耦合元件

共振穿隧二極體

調變摻雜場效電晶體

室溫單電子記憶胞

兩端點元件


Semiconductor physics devices

第一個電晶體


Semiconductor physics devices

第一個金氧半場效電晶體

Gate length: 25m

Gate oxide: 100nm


Semiconductor physics devices

NVSM(非揮發性半導體記憶體):電源關掉後,仍保有所儲存的訊息

浮停閘:可半永久貯存電荷

將浮停閘縮至極小,只可貯存一個電子


Semiconductor physics devices

關鍵半導體技術


Semiconductor physics devices

第一個積體電路


Semiconductor physics devices

第一個微處理器


Semiconductor physics devices

Figure 1.8.Exponential increase of dynamic random access memory density versus year based on the Semiconductor Industry Association (SIA) roadmap.49


Figure 1 9 exponential increase of microprocessor computational power versus year

Figure 1.9. Exponential increase of microprocessor computational power versus year.


Figure 1 10 growth curves for different technology drivers 50

Figure 1.10.Growth curves for different technology drivers.50


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