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Recent progress on MIMOSA sensors. A.Besson, on behalf of. IReS/LEPSI : M. Deveaux, A. Gay, G. Gaycken, Y. Gornushkin, D. Grandjean, F. Guilloux, S. Heini, A. Himmi, Ch. Hu, K.Jaaskelainen, M. Pellicioli, H. Souffi-Kebbati, I. Valin, M. Winter,

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Recent progress on mimosa sensors

Recent progress on MIMOSA sensors

A.Besson, on behalf of

IReS/LEPSI : M. Deveaux, A. Gay, G. Gaycken, Y. Gornushkin, D. Grandjean, F. Guilloux,

S. Heini, A. Himmi, Ch. Hu, K.Jaaskelainen, M. Pellicioli, H. Souffi-Kebbati, I. Valin, M. Winter,

G. Claus, C. Colledani, G. Deptuch, W. Dulinski, M. Szelezliak

(M6/M8 DAPNIA: Y. Degerli, E. Delagnes, N. Fourches, P. Lutz, F.Orsini)

  • Fabrication technology

  • Parameter optimization (pitch, T, diodes, etc.)

  • Signal treatment and read-out speed

  • Thinning

  • Radiation tolerance


Mimosa 9 1
MIMOSA 9 (1)

  • Main features:

    • Techno opto.

    • Self Bias / Standard

    • Pitch 20/30/40 m

    • Small/large diodes (3/6 m)

    • With/without epi.

0.96 mm

1.2 mm

3T, 40 m

32 x 32

SB, 30 m

32 x 32

5 x 5 m

Explore

the different

parameters

SB, 20 m

64 x 64

SB, 40 m

32 x 32

A.Besson


Mimosa 9 2
MIMOSA 9 (2)

  • Beam test @ CERN-SPS (120 GeV/c -)

Charge (1 pixel); MPV ~ 325

(25 pixels); MPV ~870

(9 pixels); MPV ~ 850

MPV ~ 24

Self-Bias, Pitch = 20 m, diode 6 x 6 m2

A.Besson


Mimosa 9 3
MIMOSA 9 (3)

  • First comparisons:

    • SB with 20/30 m pitch : eff ≥ 99.8%

    • Resolution ~ 1.5 m @ 20 m pitch

    • Analysis in progress:

      • Temperature

      • Chip without epi.

      • Hit selection

        optimization

Sp. Resolution; SB,

diode 3.4 x 4.3 m2

Noise (e-) vs

Diode surface m2

A.Besson


Fast read out architecture
Fast read-out architecture

  • Different developments based on Mimosa 6

    • VX DET layer 1-2:

      • Fast, column // readout, with hit selection

    • VX DET layer 3-4-5:

      • Multiple scans of the whole detector within train (r.o. ~200 s).

      • Then read the samples between trains

      • Integrate capacitors in each pixel (M7 and M8)

  • Mimosa 7

    • Features

      • photoFET.

      • 25 m pitch, No epi., 0.35 m, 64x16 readout in // with CDS

    • Status

      • Being tested

      • Beam test in Oct.

  • Mimosa 8 (with DAPNIA)

    • Features

      • 25 m pitch, 8 m epi., 0.25 m, 128x32 readout in // with CDS

      • Signal discrimination

    • Status

      • Being tested

A.Besson


Thinning
Thinning

  • Mimosa 5 thinned down to epi. layer

    • Beam test. @ CERN

    • S/N

M5-B thinned down

M5-B standard

A.Besson


Mimostar
MIMOSTAR

  • STAR exp. upgrade: 1st proto sent for fabrication

    • Extension of the Vertex Detector (2 layers)

    • Running conditions

      • T amb. (higher leakage current). Readout time ~ 4ms

    • Features

      • Opto technology to reduce noise

      • TSMC 0.25 techno

      • Based on M5

      • Pitch = 30x30 m2. 128x128 pixels

      • Surface: ~ 4 x 5 mm2

      • Subdivision in 10 groups of columns

      • Pure analogic output. 10x10MHz output

    • Status

      • Expected back from fab. end Oct.

A.Besson


Radiation hardness
Radiation hardness

  • SUC 1:

    • Chip with 8  pixels design. 30 m pitch

      • Goal: study charge loss after irraditaion (X-ray)

    • Irradiation:

      • X-ray: 500kRad and 1MRad

      • Calibration with 55Fe

      • Measure leakage current @ different T

    • Being analysed

      • Charge loss  for some pixel designs

      • Leakage current

  • Next irradiation + beam test

    • M9 (X, n)

    • M5 (n)

 Seems to stand 1 MRad

A.Besson


Conclusion and outlook
Conclusion and outlook

  • Geometry

    • Efficiency and resolution ok from 20 to 40 m

  • New techno opto. AMS 0.35 m

    • Epi. Layer may change

  • Chip read-out architecture

    • 2 research lines

      • layer 1-2 : r.o. speed

      • Layer 3-4-5 : storage capacitors

    • 2 proto being tested

    • Promising results

  • Radiation hardness

    • Studies in progress

    • Evidence  stand > 0.5 MRad. Up to 1MRad.

    • M9 (n,X), M5 (n)

A.Besson








Beam tests r sum
Beam tests: résumé.

  • 3 sessions (mai, juillet, aout).

  • Chips testés:

    • M5B: 202, 205, 306.

    • M5 15 m: “nGD”

    • M9: 1,2 (avec epi.) et 7(sans epi.)

      • 150k evts/run. 3/4 pts de Temp.

  • Remarques

    • Inversion du trigger pour M5 15 m

    • Veto apres le reset pour M9. 2  10 frames.

      • ~ 50% d’efficacité…

  • A faire:

    • Calibration M5 nGD.

    • M9 sans epi.

    • M5 et M9 irradiés

    • M7

A.Besson



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