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Recent progress on MIMOSA sensors. A.Besson, on behalf of. IReS/LEPSI : M. Deveaux, A. Gay, G. Gaycken, Y. Gornushkin, D. Grandjean, F. Guilloux, S. Heini, A. Himmi, Ch. Hu, K.Jaaskelainen, M. Pellicioli, H. Souffi-Kebbati, I. Valin, M. Winter,

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recent progress on mimosa sensors

Recent progress on MIMOSA sensors

A.Besson, on behalf of

IReS/LEPSI : M. Deveaux, A. Gay, G. Gaycken, Y. Gornushkin, D. Grandjean, F. Guilloux,

S. Heini, A. Himmi, Ch. Hu, K.Jaaskelainen, M. Pellicioli, H. Souffi-Kebbati, I. Valin, M. Winter,

G. Claus, C. Colledani, G. Deptuch, W. Dulinski, M. Szelezliak

(M6/M8 DAPNIA: Y. Degerli, E. Delagnes, N. Fourches, P. Lutz, F.Orsini)

  • Fabrication technology
  • Parameter optimization (pitch, T, diodes, etc.)
  • Signal treatment and read-out speed
  • Thinning
  • Radiation tolerance
mimosa 9 1
MIMOSA 9 (1)
  • Main features:
    • Techno opto.
    • Self Bias / Standard
    • Pitch 20/30/40 m
    • Small/large diodes (3/6 m)
    • With/without epi.

0.96 mm

1.2 mm

3T, 40 m

32 x 32

SB, 30 m

32 x 32

5 x 5 m

Explore

the different

parameters

SB, 20 m

64 x 64

SB, 40 m

32 x 32

A.Besson

mimosa 9 2
MIMOSA 9 (2)
  • Beam test @ CERN-SPS (120 GeV/c -)

Charge (1 pixel); MPV ~ 325

(25 pixels); MPV ~870

(9 pixels); MPV ~ 850

MPV ~ 24

Self-Bias, Pitch = 20 m, diode 6 x 6 m2

A.Besson

mimosa 9 3
MIMOSA 9 (3)
  • First comparisons:
    • SB with 20/30 m pitch : eff ≥ 99.8%
    • Resolution ~ 1.5 m @ 20 m pitch
    • Analysis in progress:
      • Temperature
      • Chip without epi.
      • Hit selection

optimization

Sp. Resolution; SB,

diode 3.4 x 4.3 m2

Noise (e-) vs

Diode surface m2

A.Besson

fast read out architecture
Fast read-out architecture
  • Different developments based on Mimosa 6
    • VX DET layer 1-2:
      • Fast, column // readout, with hit selection
    • VX DET layer 3-4-5:
      • Multiple scans of the whole detector within train (r.o. ~200 s).
      • Then read the samples between trains
      • Integrate capacitors in each pixel (M7 and M8)
  • Mimosa 7
    • Features
      • photoFET.
      • 25 m pitch, No epi., 0.35 m, 64x16 readout in // with CDS
    • Status
      • Being tested
      • Beam test in Oct.
  • Mimosa 8 (with DAPNIA)
    • Features
      • 25 m pitch, 8 m epi., 0.25 m, 128x32 readout in // with CDS
      • Signal discrimination
    • Status
      • Being tested

A.Besson

thinning
Thinning
  • Mimosa 5 thinned down to epi. layer
    • Beam test. @ CERN
    • S/N

M5-B thinned down

M5-B standard

A.Besson

mimostar
MIMOSTAR
  • STAR exp. upgrade: 1st proto sent for fabrication
    • Extension of the Vertex Detector (2 layers)
    • Running conditions
      • T amb. (higher leakage current). Readout time ~ 4ms
    • Features
      • Opto technology to reduce noise
      • TSMC 0.25 techno
      • Based on M5
      • Pitch = 30x30 m2. 128x128 pixels
      • Surface: ~ 4 x 5 mm2
      • Subdivision in 10 groups of columns
      • Pure analogic output. 10x10MHz output
    • Status
      • Expected back from fab. end Oct.

A.Besson

radiation hardness
Radiation hardness
  • SUC 1:
    • Chip with 8  pixels design. 30 m pitch
      • Goal: study charge loss after irraditaion (X-ray)
    • Irradiation:
      • X-ray: 500kRad and 1MRad
      • Calibration with 55Fe
      • Measure leakage current @ different T
    • Being analysed
      • Charge loss  for some pixel designs
      • Leakage current
  • Next irradiation + beam test
    • M9 (X, n)
    • M5 (n)

 Seems to stand 1 MRad

A.Besson

conclusion and outlook
Conclusion and outlook
  • Geometry
    • Efficiency and resolution ok from 20 to 40 m
  • New techno opto. AMS 0.35 m
    • Epi. Layer may change
  • Chip read-out architecture
    • 2 research lines
      • layer 1-2 : r.o. speed
      • Layer 3-4-5 : storage capacitors
    • 2 proto being tested
    • Promising results
  • Radiation hardness
    • Studies in progress
    • Evidence  stand > 0.5 MRad. Up to 1MRad.
    • M9 (n,X), M5 (n)

A.Besson

beam tests r sum
Beam tests: résumé.
  • 3 sessions (mai, juillet, aout).
  • Chips testés:
    • M5B: 202, 205, 306.
    • M5 15 m: “nGD”
    • M9: 1,2 (avec epi.) et 7(sans epi.)
      • 150k evts/run. 3/4 pts de Temp.
  • Remarques
    • Inversion du trigger pour M5 15 m
    • Veto apres le reset pour M9. 2  10 frames.
      • ~ 50% d’efficacité…
  • A faire:
    • Calibration M5 nGD.
    • M9 sans epi.
    • M5 et M9 irradiés
    • M7

A.Besson

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