multichannel time variant readout electronics of depmos based aps for the xeus wide field imager
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Multichannel Time-Variant Readout Electronics of DePMOS based APS for the XEUS Wide Field Imager. M. Porro , S. Herrmann, L. Strueder, J. Treis. MPI for extraterrestrial physics. P. Lechner. PNSensor GmbH. G. Lutz, R. H. Richter. MPI for physics. C. Fiorini, L. Bombelli,

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multichannel time variant readout electronics of depmos based aps for the xeus wide field imager
Multichannel Time-Variant Readout Electronics of DePMOS based APS for the XEUS Wide Field Imager

M. Porro, S. Herrmann,

L. Strueder, J. Treis

MPI for extraterrestrial physics

P. Lechner

PNSensor GmbH

G. Lutz, R. H. Richter

MPI for physics

C. Fiorini, L. Bombelli,

G. Langfelder, A. Longoni

Politecnico di Milano & INFN

Ingenieurbuero Werner Buttler

W. Buttler

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

xeus project x ray e volving u niverse s pectroscopy
XEUS project(X-rayEvolvingUniverseSpectroscopy)

Exploring the early universe by imaging spectroscopy in the X-ray band

(100 eV – 30 keV)

Observation of the hot Universe at high redshifts

Device active area 7.68 x 7.68 cm2

Device thickness 450 mm

Pixel size: 75 x 75 mm2

Position resolution ca. 30 mm

Total 1024 x 1024 pixel cells

Energy resolution @ Mn-Ka 125 eV

Energy resolution @ C-Ka 50 eV

System noise 3-5 e- ENC

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

xeus wfi specifications

XMM EPIC XEUS WFI

energy range 0.1 ... 15 keV 0.1 ... 20 keV

focal length 7.5 m 50 m

angular resolution 15 arcsec 2 arcsec

focal plane res. 36 µm / arcsec 250 µm / arcsec

field of view 30 arcmin 5 arcmin

collection area 1 keV 0.5 m² 6 m² (30 m²)

time resolution 70 msec 1 ... 5 msec

operating temp. 130 K > 180 K

Active Pixel Sensor » 1 preamp / pixel

» random accessible pixels

» no charge transfer

XEUS WFI specifications

  • Specifications

thickness 300 µm ➞500 µm

pixel size 150 µm ➞ 75 µm

detector area 6 x 6 cm² ➞ 7.68 x 7.68cm²

format400 x 400 ➞ 1024 x 1024

readout speed

readout speed

leakage current

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

the depmos concept
The DePMOS Concept
  • p-channel MOSFET integrated on high-ohmic, sideward depleted n-substrate
  • a potential minimum is formed by S/D potentials aided by a
  • deep n implantation
  • electrons are collected in an internal gate close to the surface
  • the transistor current is modulated by charge collected in the
  • internal gate
  • the transistor can be switched on/off by an external (top) gate
  • An n+ clear contact surrounded by a clear gate is used to remove the charge from the internal gate

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

depmos properties
DePMOS Properties
  • DePMOS provides detection and amplification jointly
  • DePMOS is free of interconnection capacitances
  • The internal gate exists regardless of a current flowing in the DePMOS channel or not. Power consuption is minimized
  • Multiple non-desctructive readout is possible
  • matrix pixel 75 x 75 µm²
  • DEPFET
  • geometry W = 47 µm
  • L = 5 µm
  • dedicated technology
  • 2 polysilicon layers
  • 2 metal layers
  • leakage current level
  • 100 pA/cm²
  • 16 fA/pixel

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

aps matrix organisation
APS – matrix organisation
  • global contacts for drain (source) , back contact, substrate, …
  • gate, clear & cleargate connected row-wise
  • sources connected column-wise
  • 1 active row
  • DEPFETs ON » readout & reset
  • all other pixels
  • DEPFETs OFF » integration
  • random accessible pixels
  • » window mode, mixed mode

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

aps for the wfi

APS for the WFI

  • APS readout modes

1024 x 1024 pixel

7.68 x 7.68 cm²

5 arcmin FOV

  • full frame mode
  • readout time: ~ µsec / row
  • ~ msec / frame
  • window mode
  • mixed mode
  • fast timing mode
  • e.g. 16 x 16 pixel
  • ~ 100.000 cps
  • »fast transients of
  • bright point sources

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

depfet aps prototypes for the xeus wfi
DEPFET APS – prototypes for the XEUS WFI
  • Switcher II
  • 64 channel control chip
  • 2 ports / channel
  • integrated sequencer
  • high voltage CMOS process (> 20 V p-p)
  • 50 MHz clock
  • CAMEX 64 G / K
  • 64 channel low noise voltage amplifier
  • 64 channel 8-fold CDS filter
  • 64/1 analog multiplexer
  • source follower gain 3.7 µV/el.

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

depfet signal measurement time variant readout

incomplete clear!

DEPFET – signal measurement(time variant readout)

measure signal levels

1. before clear -» signal

2. after clear -» baseline

3. calculate difference

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

depmos linearity

clear pulses

laser pulses

drain current

output

measurements

time

DePMOS Linearity

The drain current is measured

Laser intensity is calibrated with an X-ray source

Variation of the total charge by increasing number of the laser pulses per cycle

  • Integral non-linearity <0.4%
  • input range of 200 keV

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

front end configurations and equivalent input capacitance

QIN

DID

DVEG

DVEG

DVS

CEQ=QIN/DEG

CEQ=QIN/DEG

QIN

Front end Configurations and Equivalent Input Capacitance

source follower readout

drain current readout

gm=50mS

ID=60mA

Charge/current gain (gQ) 200-350pA/el.

Charge/Voltage Gain 4-6 mV/el.

  • The signal and the noise sources are referred to the external gate
  • Definition of Equivalent Input Capacitance CEQ
  • QIN in the internal gate -> DVS or DID
  • DVEG external gain signal that produces the same DVS or DID
  • CEQ=QIN/DEG

Measured CEQ=35-40fF

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

noise spectral density
Noise Spectral Density
  • ID 60mA
  • gm 50mS
  • √af=3mV
  • √a=18nV/ √Hz
  • √(8/3)kT/gm=
  • =14nV/ √Hz
  • noise corner 30kHz

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

readout requirements
Readout Requirements
  • DePMOS parameters
  • CEQ=40fF
  • gm=50mS
  • gQ=200pA/el.
  • V/c=4mV/el.
  • √a=14nV/ √Hz
  • √af=3mV
  • electronics requirements:
  • multichannel ASIC
  • time-variant readout
  • variable readout speed
  • maximum readout speed 4mS
  • total ENC <4 el. r.m.s.
  • dynamic input range: 40keV
  • Linearity <1%

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

asic development
ASIC Development
  • VELA Chip
  • In collaboration with Politecnico di Milano and INFN (Vlsi ELecrtonics for Astronomy)
  • AMS 0.35mm CMOS 3.3V
  • Trapezoidal Weighting Function with
  • Switched Current Technique
  • Source Follower readout
  • Drain Current readout
  • First submission June 2006
  • First prototypes in September 2006
  • CAMEX Chip
  • In collaboration with Mr. W. Buttler
  • IMS 0.8mm CMOS 5V
  • 8-fold Multi-correlated Double Sampling
  • Source Follower readout
  • First Prototypes already tested
  • -64 channels
  • -no adjustable bandwidth
  • 128 channel version with adjustable bandwidth under design

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

mcds camex
MCDS-CAMEX

CAMEX 64 G / K

  • ac-coupled, low noise voltage amplifier
  • 64 channel parallel 8-fold CDS
  • internal PMOS current load
  • integrated CDS sequencer
  • 64/1 analog output serializer
  • power consumption ≤ 0.6 W
  • row processing time ≥ 4 µsec
  • 128 channel version in design

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

energy resolution of the matrix

Measured ENC on noise peak:

3.6 el. r.m.s.

with single pixel hits spectrum

133 eV @ 5.9 keV, T = -40 °C

Energy resolution of the matrix

Ceq=40fF

shaper parameters:

A1/t=1.26x106

A2=1.27

cycle time: 16ms

Predicted ENC:

3.4 el. r.m.s.

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

mcds filtering optimization
MCDS Filtering optimization
  • The used WF has quite high slope
  • The bandwidth is not optimized for the used speed
  • Optimizing the bandwidth an ENC of 2.1 el. is predicted
  • With the used bandwidth it should be possible to read-out the pixel in 4ms
  • The bandwidth must be adjusted for every speed setting
  • A scalable trapezoidal WF would provide the near optimum filter for Series noise at every speed setting

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

trapezoidal wf with sct

Vout

Vout

subtraction

time

time

time

Trapezoidal WF with SCT

1° integration

2° integration

out

subtraction

Current proportional to the input charge deposited into the DePMOS

Double integration of this current

Subtraction of the output of the two integrating stages after the first integration

The output is maximized when the input signal arrives between the two integration phases (Flat-top region)

Vout

current proportional to the charge stored into the pixel

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

practical implementation

2

3

1

2

1

3

Practical Implementation

out

integrator stage

subtraction stage

  • the charge integrated in the first integration is transferred to a second stage (subtraction stage)
  • the first stage is resetted before the second integration
  • at the end of the second integration the output of the second stage gives the difference between the two integrated values

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

mcds vs sct
MCDS vs SCT
  • SCT
  • Benefits:
  • The equivalent bandwidth is independent from timing
  • A finite width filter function is feasible
  • Lower switching noise
  • Drawbacks:
  • An offset of the input signal is critical and can heavily deteriorate the dynamic range
  • The gain depends on the timing (an adjustable gain is needed)
  • MCDS
  • Benefits:
  • The gain is almost independent on the timing
  • An offset of the input signal is not critical
  • Drawbacks:
  • The equivalent bandwidth depends on the timing (An adjustable low-pass filter is needed)
  • A real finite width WF is not feasible
  • Higher switching noise

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

source follower vs current readout

Bias

current source

drain

source

V2I

gate

drain

Bias

current subtraction

gate

Source Follower vs. Current readout
  • Benefits:
  • The input signal is AC coupled. It is relatively easy to cope with:
  • - non homogeneity of the DePMOS matrix
  • - eventual Vth shifts
  • Drawbacks:
  • The speed of the system is limited by the gm of the DePMOS and by the Capacitance of a matrix Source Line (30-40pF)
  • The voltage step at the source must be converted into a current (more suitable for MCDS)
  • Only a small signal amplification is possible because of the limited dynamic range

Source Follower

  • Benefits:
  • The DePMOS drain current is directly used as the input signal of the integrator (pixel gain 200-300 pA/el)
  • all DePMOS terminals are at a fixed potential
  • The speed is no more limited by the Source line capacitance
  • Drawbacks:
  • It is more complex to cope with the non homogeneity of the Matrix.
  • A current cancellation circuit is needed for each individual pixel

Current Readout

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

source follower v2i

Vin

IOUT

Source Follower: V2I

M 1

  • The output current is not set by a feedback: mismatch can be important
  • Output current must be in the range of few mA to limit the size of the capacitances of the integration stage
  • Converted current in injected into the output mirror by a drain (MB drain)
  • The second pole of the loop gain is given by CF and 1/gmMB. The stability is independent from RV2I that can be high (tens of kW).

dominant pole

CC

CIN

0V

0V

MB

second pole

0V

CF

RV2I

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

v2i noise analysis
V2I Noise analysis

1

M

4kT/RS

in,MIR

en,AMP

CIN

4kT/RV2I

CF

RV2I

(8/3)kTgm

  • RS>1/gmDePMOS=20K ->RS>100K
  • en,AMP at the input. gmAMP 10mS W/L 800/.5
  • RV2I attenuated by (CF/CIN)2=100 RV2I=16K
  • in,MIR=(2/3)KTgmMIR multiplied by (RV2IM)2 dominant noise source

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

s f noise spectral density
S.F. Noise spectral density
  • DePMOS
  • eN=3e-16 V^2/Hz (17 nV/Hz)
  • eN=2e-16 V^2/Hz (14 nV/Hz)
  • [gm=50uS]
  • af=9e-12 V^2
  • Elecronics
  • eN=3e-17 V^2/Hz (5.5 nV/Hz)
  • af=1.7e-13 V^2

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

s f simulations
S.F. Simulations
  • Input dynamic range: 0-40mV
  • equivalent to 0-10000 el. with S.F.DePMOS
  • Output Range:0-1.6 V
  • Simulated weighting functions
  • voltage step applied to the input of the V2I
  • DePMOS rise-time is not considered

total width: 4ms, 8ms, 16ms

non linearity <0.4%

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

s f enc
S.F. ENC
  • Flat-top 500ns
  • DePMOS theoretical noise
  • gmDePMOS 50mS
  • CS resistor 100K
  • DePMOS rise-time not considered

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

line capacitance
Line capacitance
  • The Capacitance of one matrix column:
  • mainly given by the crossing of metal lines
  • crossing 10x10 mm2
  • COX=5.5 fF
  • 4 crossing/pixel 500pixel/column
  • Crossing with Silicon and polysilicon
  • CGS and CCD give a minor contribution
  • column capacitance for the final APS 30-40pF

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

s f rise time

RV2I

S.F. Rise Time
  • RISE TIME:
  • V2I: 15ns
  • DePMOS+V2I: 700ns

30pF

gm 100mS

rO=150K

10-90%

15ns

10-90%

700ns

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

s f wf distortion
S.F. WF distortion
  • integration time: 1.5ms
  • flat top:.5ms
  • total width: 4ms
  • integration time: 6ms
  • flat top:2ms
  • total width: 14ms

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

drain current readout
Drain Current readout
  • The DePMOS Drain signal current is sent directly to the integrator.
  • An individual bias current cancellation circuit is needed

Integrator Stage

Subtraction stage

Bias current cancellation

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

current readout current storage

electron signal in the internal gate

VH+nH

VH

IBIAS+IS+n(t)

IBIAS+IS+nO

Current Readout: Current storage

IBIAS+IS+n(t)

  • Theintegrator is disconnected
  • The DePMOS current (bias+signal) is stored in a memory cell
  • At the end of this phase an unavoidable mismatch nO exists due to:
  • 1) sampled noise when the switch opens
  • 2) finite gain of the amplifier

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

current readout double integration

electron signal in the internal gate

internal gate empty

VH+nH

IBIAS+IS+nO

Current Readout: double integration

IBIAS+IS+n(t)

n(t)-nO

n(t)-nO-IS

  • 1° integration: The noise n(t) + offset nO is integrated
  • pixel is cleared
  • 2° integration: the noise n(t) + offest + signal IS is integrated
  • from the subtraction of the two integrated quantities the offset nOis cancelled

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

weighting function 4us
Weighting Function 4us

Trapezoidal weighting functions

low-pass at 25MHhz

width 3.5us

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

enc evaluations noise sources
ENC evaluations: noise sources
  • gm = 50uS
  • Cstray = 30pF
  • Rs = 100Kohm
  • gain = 200pA/el

Weighting functions

width = 3.5us

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

conclusion
Conclusion
  • DePMOS characteristics match the requirements of XEUS Mission
  • A First Multi Channel MCDS Readout ASIC has already been tested with a 64x64 APS prototype. Obtained results are in agreement with theoretical predictions:
  • -3.6 el. r.m.s. measured
  • -line readout speed of 16 ms
  • To overcome the limitations of the available electronics two new circuits are under development
  • -Trapezoidal Weighting Function
  • ●Source Follower
  • ●Drain Readout
  • From simulations the most promising solution for fast timing is the current readout mode:
  • -Line readout speed 4ms
  • -around 4 el. r.m.s.
  • To further improve the performance of the system two ways are possible:
  • -increase the gain of the pixel (gm and gq)
  • -increase the number of readout channel ( time available for each measurement)

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

radiation hardness
Radiation Hardness

(Laci ANDRICEK MPI HLL)

Matteo Porro MPI Halbleiterlabor [email protected] FEE 2006 Perugia

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