Physics and Technology of Modern Semiconductor Devices
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Physics and Technology of Modern Semiconductor Devices. Chapter II : 热平衡时的能带和载流子浓度. 半导体材料. 绝缘体 : 电导率很低,约介于 10 -18 S/cm ~ 10 - 8 S/cm, 如熔融石英及玻璃; 导 体:电导率较高,介于 10 4 S/cm ~ 10 6 S/cm ,如铝、银等金属。 半导体:电导率则介于绝缘体及导体之间。. 半导体材料. 硅的优势:. 硅器件在室温下有较佳的特性; 高品质的硅氧化层可由热生长的方式产生,成本低;

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Physics and Technology of Modern Semiconductor Devices

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Physics and technology of modern semiconductor devices

Physics and Technology of Modern Semiconductor Devices

Chapter II :


Physics and technology of modern semiconductor devices

:10 -18S/cm10 -

8S/cm,

10 4S/cm

106S/cm


Physics and technology of modern semiconductor devices


Physics and technology of modern semiconductor devices

25%


Physics and technology of modern semiconductor devices

(compound)

IVIVSiC

III-VGaAsGaPInAs

II-VIZnOZnSCdTe

IV-VIPbSPbSePbTe


Physics and technology of modern semiconductor devices

III(Al)(Ga)V(As)AlxGax-1AsAxB1-xCyD1-yGaxIn1-xAsyp1-y(GaP)(InAs)(GaAs)

(GaAs),


Physics and technology of modern semiconductor devices

(compound)


Physics and technology of modern semiconductor devices

(lattice)(unit cell)


Physics and technology of modern semiconductor devices

abc

Rma + nb+ pc

mnp


Physics and technology of modern semiconductor devices

:

(simple cubic,sc)a(polonium)

(body-centered,bcc),(sodium)(tungsten)


Physics and technology of modern semiconductor devices

(face-centered cubic, fcc):

12(aluminum)(copper)(gold)(platinum)


Physics and technology of modern semiconductor devices

1/4(a)

(zinc-blende lattice)III-V(GaAs)III(Ga)V(As)


Physics and technology of modern semiconductor devices

1:

()(1/8)8()+1()2

[]=a

=a=

=/=

68%32%


Physics and technology of modern semiconductor devices

2 300K5.43


Physics and technology of modern semiconductor devices

8

=/


Physics and technology of modern semiconductor devices

(Miller indices)

()

(hkl)


Physics and technology of modern semiconductor devices

( )x{hkl}{100}(100)(010)(001)[hkl][100](100)x[111](111)

<hkl><100>[100][010][001]


Physics and technology of modern semiconductor devices

a3a2a1/a1/3a1/2a6:2:3(6a)(623)


Physics and technology of modern semiconductor devices

44(covalent bonding)


Physics and technology of modern semiconductor devices


Physics and technology of modern semiconductor devices

GaAsAsGaAsGa


Physics and technology of modern semiconductor devices

(hole)


Physics and technology of modern semiconductor devices

m0q0free-space permittivityhPlank constantn


Physics and technology of modern semiconductor devices

(n1)(degenerate)

NNNa


Physics and technology of modern semiconductor devices

NN3s3p

44


Physics and technology of modern semiconductor devices

()()ECEV

(EC-EV)Eg


Physics and technology of modern semiconductor devices

pm0

Ep


Physics and technology of modern semiconductor devices

mn(n)

-Ep


Physics and technology of modern semiconductor devices

(mpp)

mn0.25m0 ()mpm0()p0Eg


Physics and technology of modern semiconductor devices

-(p0)

0.063m0


Physics and technology of modern semiconductor devices

-p0[100]ppC(Eg),(pC)0.19m0


Physics and technology of modern semiconductor devices


Physics and technology of modern semiconductor devices

[(Cu)][(Zn)(Pb)]


Physics and technology of modern semiconductor devices

,()


Physics and technology of modern semiconductor devices

(SiO2)


Physics and technology of modern semiconductor devices


Physics and technology of modern semiconductor devices

(1eV)


Physics and technology of modern semiconductor devices

T0KEg1.12eV1.42eVkTEg


Physics and technology of modern semiconductor devices

intrinsic semiconductor

N (E)F(E)(EC0)Etop


Physics and technology of modern semiconductor devices

ncm3N(E)F(E)

(Feimidistribution function)E

kT(Kelvin)EF


Physics and technology of modern semiconductor devices

(Fermi level)1/2


Physics and technology of modern semiconductor devices

F(E)EF3kT200.05


Physics and technology of modern semiconductor devices

E


Physics and technology of modern semiconductor devices

NENEE1/2


Physics and technology of modern semiconductor devices

:

(b)N(E)(c)F(E)(d)n(E)E()(d)


Physics and technology of modern semiconductor devices

1(EFECkT)


Physics and technology of modern semiconductor devices

Nc


Physics and technology of modern semiconductor devices

EC


Physics and technology of modern semiconductor devices

300K

NC2.861019cm3

4.71017cm-3

p

NV


Physics and technology of modern semiconductor devices

NV2.661019cm-3

7.01018cm-3

ni:

,npni

Ei


Physics and technology of modern semiconductor devices

Ei


Physics and technology of modern semiconductor devices


Physics and technology of modern semiconductor devices

Eg=EC-EV

ni 9.65109cm-3

2.25106cm3

ni


Physics and technology of modern semiconductor devices

extrinsic

(donor)

(a)545n


Physics and technology of modern semiconductor devices

(acceptor)

34holep


Physics and technology of modern semiconductor devices

(ionization energy) EDmnm0s

0.025eV0.007eV


Physics and technology of modern semiconductor devices

0.05eV

(kT)


Physics and technology of modern semiconductor devices

(nondegenerate)EFEV3kTEC3kT


Physics and technology of modern semiconductor devices

ED


Physics and technology of modern semiconductor devices

p=NA


Physics and technology of modern semiconductor devices

(EC-EV)


Physics and technology of modern semiconductor devices

niEiEi


Physics and technology of modern semiconductor devices

npni2


Physics and technology of modern semiconductor devices

: 1016(300K)

: 300K

ni9.65109cm-3


Physics and technology of modern semiconductor devices


Physics and technology of modern semiconductor devices


Physics and technology of modern semiconductor devices

()()

n


Physics and technology of modern semiconductor devices

nnmajority carriernminority carrier


Physics and technology of modern semiconductor devices

ppp


Physics and technology of modern semiconductor devices

|NDNA|ni


Physics and technology of modern semiconductor devices


Physics and technology of modern semiconductor devices

ND1015cm3


Physics and technology of modern semiconductor devices

(nnND)


Physics and technology of modern semiconductor devices

(degenerate)npEFECEV


Physics and technology of modern semiconductor devices

bandgapnarrowing effectEg


Physics and technology of modern semiconductor devices

ND1018cm3Eg0.022eV2%NDNC2.861019cm3Eg0.12eVEg


Physics and technology of modern semiconductor devices

End of Chapter II


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