Optoelectrical Devices with Nano-Structures
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Optoelectrical Devices with Nano-Structures. RCAS, Academia Sinica Shih-Yen Lin ( 林時彥 ). Experiment Systems (Since 2006.10). Device Pr ocessing Line. P32 MBE (NCU). LandMark Corporation. 10-300 K IR Detector Measurement System. C21 MBE (NCU). Xper t Corporation.

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Optoelectrical Devices with Nano-Structures

RCAS, Academia Sinica

Shih-Yen Lin (林時彥)


Experiment Systems (Since 2006.10)

Device Processing Line

P32 MBE (NCU)

LandMark Corporation

10-300 K IR Detector

Measurement System

C21 MBE (NCU)

Xpert Corporation

Plasma-Assisted MBE (NSYSU)

10-300 K PL/PLE


Collaborations between different institutes
Collaborations Between Different Institutes

NTU

(臺灣大學)

國科會計畫

Xpert

(翔合)

固本精進計畫

CSIST

(中科院)

國科會計畫

Project Collaboration

(李嗣涔 教授)

Project Collaboration

Local Wafer Vender (MBE)

GaSb QDs

(Prof. Bumberg)

Crystal Epitaxy and Optoelectronic Device Laboratory (RCAS)

TUB, Germany

PPP Project

Wafer Provider

MBE growth

(杜立偉 教授)

MBE growth

(綦振瀛 教授)

NSYSU

(中山大學)

中研院奈米計畫

RCAS

(應科中心)

NCU

(中央大學)



InGaAs-Capped Quantum-Dot Infrared Photodetectors Operated at LWIR Range

Appl. Phys. Lett., under revision


Stark Effect in Asymmetric QD structures at LWIR Range

Accepted for publication at IEEE PTL.


Two-Color Quantum-Dot Infrared Photodetectors at LWIR Range

Appl. Phys. Lett., under revision



Buffer Layer Growth on Patterned Substrates at LWIR Range

100 nm GaAs

50 nm GaAs/GaAsSb

100 nm GaAsSb


Fabrication of Nano-Holes on GaAs Substrates at LWIR Range

AFM Local Oxidation

MBE Thermal Desorption

Thin Buffer Layer Growth

Site-Controlled Self-Assembled QD growth

Appl. Phys. Lett. 88, 072107 (2006)


Fabrication of Nano-Holes on GaAs Substrates at LWIR Range

0.6 mm

0.6 mm

After Oxidation

After Thermal Desorption


Site-Controlled Self-Assembled Quantum Dots Grown on GaAs Substrates

Nano-oxides

Site-controlled QDs

(mm)

Site-controlled QDs

Dot density 1x107 cm-2

  • AFM Local Oxidation

  • Smooth Surfaces of Thin GaAsSb Buffers

  • Site-Controlled Self-Assembled QDs

    with Ultra-Low Dot Density 1x107 cm-2

Submitted to Appl. Phys. Lett.



GaSb QDs grown under Different V/III Ratios Substrates

V/III=2.0

V/III=1.2

V/III=1.0

V/III=1.6


The Evolution of GaSb Quantum Rings with As Supply Substrates

100 % Sb

4 sec. As irradiation

8 sec. As irradiation

50 % Sb


Future Work Substrates


GaN-Based Devices By Plasma-Assisted Molecular Beam Epitaxy Substrates

GaN Rods on Si (111)

InGaN film on GaN templates


Future Work Substrates

  • Epitaxially Grown Graphene by MBE

    - Career development award

    - A new MBE system with max. substrate temperature 1200 oC

    - Filament C source and N plasma source within a single chamber

  • Single-QD Devices

    - Based on current site-controlled QD growth technique

    - Single-photon generator array

    - Single-electron transistor array

  • Long-Wavelength Light Sources and Detectors

    - A new measurement system up to 100 mm

    - New device structures for tunable long-wavelength light

    sources/detectors


Publications after 2008 Substrates

1. Chun-Yuan Huang, Meng-Chyi Wu*,Jeng-Jung Shen, and Shih-Yen Lin, “Self-ordered InGaAs Quantum Dots Grown at Low Growth Rates”, J. Appl. Phys. vol. 103, no. 4, pp. 044301, Feb. 2008 (SCI, IF:, NSC 95-2215-E-007-003.).

2. Chi-Che Tseng, Shu-Ting Chou, Yi-Hao Chen, Tung-Hsun Chung, Shih-Yen Lin* and Meng-Chyi Wu,” Influence of As-stabilized surface on the formation of InAs/GaAs quantum dots”, J. Vacuum Sci. Tech. B, vol. 26, no. 3, pp. 956-958, May/June 2008 (SCI, IF: 1.419, NSC 96-2221-E-001-030).

3. Shu-Ting Chou, Chi-Che Tseng, Cheng-Nan Chen, Wei-Hsiun Lin, Shih-Yen Lin*, and Meng-Chyi Wu, “Quantum-Dot/Quantum-Well Mixed-Mode Infrared Photodetectors for Multi-Color Detection”, Appl. Phys. Lett., vol. 92, no. 25, pp. 253510, June 2008 (The paper is also selected in the Virtual Journal of Nanoscale Science & Technology, Volume 18, Issue 2 (2008)) (SCI, IF: 3.596, NSC 96-2221-E-001-030).

4. C. L. Tsai, K. Y. Cheng, S. T. Chou, S. Y. Lin, C. Xu and K. C. Hsieh, “Tailoring detection wavelength of InGaAs quantum wire infrared photodetector”, J. Vacuum Sci. Tech. B, vol. 26, no. 3, pp. 1140-1144, May/June 2008 (The paper is also selected in the Virtual Journal of Nanoscale Science & Technology, Volume 17, Issue 23 (2008)) (SCI, IF: 1.419).

5. Chi-Che Tseng, Shu-Ting Chou, Yi-Hao Chen, Cheng-Nan Chen, Wei-Hsun Lin, Tung-Hsun Chung, Shih-Yen Lin*, Pei-Chin Chiu, Jen-Inn Chyi and Meng-Chyi Wu, “Enhanced Normal-Incident Absorption of Quantum-Dot Infrared Photodetectors with Smaller Quantum Dots”, IEEE Photonics Technology Lett., vol. 20, no. 14, pp. 1240-1242, July 2008 (SCI, EI, IF: 2.015, NSC 96-2221-E-001-030)

6. Shu-Ting Chou, Shih-Yen Lin*, Cheng-Nan Chen, Chi-Che Tseng, Yi-Hao Chen, and Meng-Chyi Wu, “Single-Period InAs/GaAs Quantum-Dot Infrared Photodetectors”, IEEE Photonics Technology Lett., vol. 20, no. 18, pp. 1575-1577, Sep. 2008 (SCI, EI, IF: 2.015, NSC 96-2221-E-001-030).

7. Chi-Che Tseng, Shu-Ting Chou, Shih-Yen Lin*, Cheng-Nan Chen, Wei-Hsun Lin, Yi-Hao Chen, Tung-Hsun Chung, and Meng-Chyi Wu, “The Transition Mechanisms of a ten-Period InAs/GaAs Quantum-Dot Infrared Photodetector”, J. Vacuum Sci. Tech. B, vol. 26, no. 6, pp. 1831-1833, Nov/Dec 2008 (SCI, IF: 1.419, NSC 96-2228-E-002-012).

8. S. T. Chou, S. Y. Lin*, Bonnie Yu, J. J. Shyue, C. C. Tseng, C. N. Chen, M. C. Wu and W. Lin, “The Influence of Interface Roughness on the Normal Incident Absorption of Quantum-Well Infrared Photodetectors”, Thin Solid Films, vol. 517, no. 5, pp. 1799–1802, Jan. 2009 (SCI, IF: 1.693, SBIR project with Grant # 1C950022).

9. Yung-Sheng Wang, Shoou-Jinn Chang, Shu-Ting Chou and Shih-Yen Lin* and Wei Lin, “High Responsivity InGaAs/InP Quantum-Well Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition”, Jpn. J. Appl. Phys. vol. 48, no. 4, pp. 04C108, May 2009 (SCI, IF:, SBIR project with Grant # 1C950022).

10.Shih-Yen Lin*, Shu-Ting Chou, Wei-Hsun Lin, “The Transition Mechanisms of Quantum-Dot/Quantum-Well Mixed-Mode Infrared Photodetectors”, Infrared Physics & Technology, in press (SCI, IF:, NSC 96-2221-E-001-030 and NSC 96-2218-E-002-012).


Publications after 2008 Substrates

11. Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, Shu-Chen Mai, Shih-Yen Lin*, and Meng-Chyi Wu, “InGaAs-Capped InAs/GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range”, IEEE Photonics Technology Lett. accepted for publication (SCI, IF:, NSC 96-2221-E-001-030 and NSC 96-2218-E-002-012).

12. Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, Shih-Yen Lin*, and Meng-Chyi Wu, “Enhancement of Operation Temperature of InAs/GaAs Quantum-Dot Infrared Photodetectors with Hydrogen-Plasma Treatment”, J. Vacuum Sci. Tech. B accepted for publication (SCI, IF:, NSC 96-2221-E-001-030 and NSC 96-2218-E-002-012).

13.Shih-Yen Lin*, Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, and Shu-Cheng Mai, “Voltage-Tunable Two-Color Quantum-Dot Infrared Photodetectors”, Appl. Phys. Lett. under revision (SCI, IF:, NSC 98-2221-E-001-001).

14. Wei-Hsun Lin, Kuang-Ping Chao, Chi-Che Tseng, Shu-Chen Mai, Shih-Yen Lin* and Meng-Chyi Wu, “The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors”, J. Appl. Phys. under revision (SCI, IF:, NSC 98-2221-E-001-001).

15.Shih-Yen Lin*, Chi-Che Tseng, Tung-Hsun Chung, Wen-Hsuan Liao, Shu-Han Chen, and Jen-Inn Chyi, “Site-Controlled Self-Assembled InAs Quantum Dots Grown on GaAs Substrates”, submitted to Appl. Phys. Lett. (SCI, IF:, NSC 98-2221-E-001-001).

16. Chi-Che Tseng, Tung-Hsun Chung, Shu-Cheng Mai, Kuang-Ping Chao, Wei-Hsun Lin, Shih-Yen Lin* and Meng-Chyi Wu, “The transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages”, submitted to J. Vacuum Sci. Tech. B (SCI, IF:, NSC 98-2221-E-001-001).

17. Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, Shu-Chen Mai, Shih-Yen Lin*, and Meng-Chyi Wu, “InGaAs-Capped InAs/GaAs Quantum-Dot Infrared Photodetectors with 10.4 m Responses”, submitted to J. Vacuum Sci. Tech. B (SCI, IF:, NSC 98-2221-E-001-001).


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