Nanopatterning of Silicon Carbide by UV and Visible Lasers. By Arvind Battula 12/02/2004. Properties of SiC. Wide-gap semiconductor. High thermal conductivity. Low thermal expansion coefficient. High melting point. High hardness. High breakdown electric field. High electron saturation.
Zhang, et. Al., 1996, “Direct photoetching of single crystal SiC by VUV-266 nm multiwavelength laser ablation”, Appl. Phys. A,64, p.367.
Pulse duration = 120 fs; wavelength = 800 nm
Dong.Y., and Molian. P., 2003, “Femtosecond pulsed laser ablation of 3C-SiC thin film on Silicon”, Appl. Phys. A, 77, p. 839
SEM micrograph of the monolayer of silica spheres diameters (a) 1.76 µm and (b) 640 nm.
SiC SubstrateExperimental Setup.
Schematic of (a) experimental setup, (b) Irradiation of the spheres on SiC.
Features formed on the SiC substrate with a 355 nm laser (a) 1.76 µm diameter spheres and 950 mJ/cm2 and (b) 640 nm diameter spheres and 850 mJ/cm2.
Variation in the feature size with respect to the laser intensity for 355 nm laser and 1.76 µm spheres.
750 nmFeatures for 532 nm Laser on Bulk SiC.
Features formed on the SiC substrate with a 532 nm laser (a) 1.76 µm diameter spheres
and 2 J/cm2 and (b) 640 nm diameter spheres and 6 J/cm2.
AFM cross section view of the features obtained with 532 nm laser and 1.76 µm spheres.
S.K. Sundaram and E. Mazur, “Inducing and Probing Non-Thermal Transitions in Semiconductors Using Femtosecond Laser Pulses”,
Nature Materials, 1, 217-224 (2002).