1 / 2

Spin transport studies in band and interface tailored materials: towards total spin polarization for spin electronics

Spin transport studies in band and interface tailored materials: towards total spin polarization for spin electronics. Jagadeesh S. Moodera, MIT, DMR - 0504158. A novel ferromagnetic semiconductor:

aurorette
Download Presentation

Spin transport studies in band and interface tailored materials: towards total spin polarization for spin electronics

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. Spin transport studies in band and interface tailored materials: towards total spin polarization for spin electronics Jagadeesh S. Moodera, MIT, DMR - 0504158 • A novel ferromagnetic semiconductor: • A novelmagnetic semiconductor has been developed. that may greatly increase the computing power, storage capacity, and flexibility of future electronic devices. • The magnetic semiconductor material created byus is indium oxide with chromium- and oxygen-induced defects. • This new material can be used to injectsspins of a given orientation into the semiconductor such as silicon. These spins then travel through the semiconductor and are read by a spindetector. • Spin injection at room temperature and its transparency shows the new material’s potential for application. • Published in Nature Materials (April 2006). • Media coverage of this work. A few examples are given below: • http://economictimes.indiatimes.com/articleshow/1593432.cms • http://www.elecdesign.com/Articles/Index.cfm?ArticleID=13244 • Also in MIT TechTalk and website and in IEEE Spectrum Spin source Spin detector Gate Fig. 1 The magnetic properties of a Cr doped In2O3 film at 300K and the schematic of a spin based device – SpinFET

  2. Spin transport studies in band and interface tailored materials: towards total spin polarization for spin electronics Jagadeesh S. Moodera, MIT, DMR - 0504158 • ii)Influence of spin polarized current on superconductivity: • Superconductivity and ferromagnetism are two types of competing ordering of great technical importance. The effect of having them next to each other is investigated here. • When the two ferromagnetic (FM) layers are pointing same way in a FM/SC/FM system, it is more detrimental to the superconductor (SC) than when the two FMs are pointing opposite to one another – leads to a large sensor signal. • The above phenomenon is demonstrated here. Extremely large signal of over 1100% is observed by us (Fig. 2). • These are the one of the first results that clearly demonstrate the effect (signals can reach > thousandfold). • Educational:Research performed by the postdoctorals John Philip, Guoxing Miao and PhD student Tiffany Santos. The research is a collaborative effort between MIT, Boise State University (Idaho) and the Korea Institute of Science and Technology (KIST). Fig.2 Magnetoresistance curves at different temperatures showing the influence of spin current on SC in a Fe/Al2O3/Al/Al2O3/NiFe multilayer. Outreach: Three High school students took part in this research and one of them is a coauthor in the Nature publication.

More Related