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# Diamond Inner Region for Thermal Modeling - PowerPoint PPT Presentation

Diamond Inner Region for Thermal Modeling. Brian Maynard April 30, 2010. Assumed Material Properties. Power dissipation for irradiated silicon (input to ANSYS). Power dissipation at 1e16 n eq /cm 2 ~122 mW/cm 2 (from T. Affolder ). For annealed silicon, we simply multiply

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### Diamond Inner Region for Thermal Modeling

Brian Maynard

April 30, 2010

Power dissipationfor irradiated silicon(input to ANSYS)

• Power dissipation at 1e16 neq/cm2 ~122 mW/cm2 (from T. Affolder )

For annealed silicon, we simply multiply

the above function by 0.57 for an

operating voltage of 900V (T. Affolder)

It is assumed the silicon is annealed

Constant Pixel Power (CPP)

+1/R Digital Power section of chip (RDP)

Constant Digital Power (CDP)

(1/14th the area of the total chip)

The orange part of the chip (CDP) is situated such that

it is farthest away from the beam center

CPP + (7.5 mm*RDP)R-1 + CDP = Total Watts/Chip

Half that was used on next slide

Silicon

Diamond

with Diamond Inner Region

Diamond Inner Region

From a low power mode, the change in temperature is not that significant (~1C)

For high power modes the change is more dramatic (~6C)