Alloying Bismuth with GaAs Shane R. Johnson, Arizona St ate University , DMR 0909028

1. Alloying Bismuth with GaAsShane R. Johnson, Arizona State University, DMR 0909028 The addition of small amounts of Bi into GaAs results in a large reduction in the bandgap energy and a significantly broader spectrum. At low temperature many of these samples exhibit an energy shift that corresponds to an increase in photoluminescence intensity. As the bismuth mole fraction is increased the photoluminescence spectra broaden and there is a large decrease and a reduced temperature dependence in the bandgap energy. These results indicate inhomogeneous Bi composition variations and possible localization due to Bi clustering. Temperature dependent photoluminescence measurements from GaAsBi quantum wells; the solid circles provide the peak position and the error bars indicate the full width half maximum of each spectrum.

2. 1st International Workshop on Bi-Containing Semiconductors Shane R. Johnson, Arizona State University, DMR 0909028 43 researchers from all over North America, Europe, Asia, and Australia converged on the University of Michigan in Ann Arbor July 13-16, 2010 for the first International Workshop on Bi-containing Semiconductors sponsored jointly by the National Science Foundation and the Michigan Center on Theoretical Physics. Technical talks included topics on: Bismide growth and bismuth incorporation strategies Structural, electrical, and optical characterization Theoretical studies of bismide semiconductor properties and device physics Device fabrication and performance The small size of the workshop and thoughtful social activities resulted in many fruitful discussions, and nucleated new scientific interactions.