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Results and discussion

Results and discussion. 455nm. 7. Results and discussion. At -15v 5µm space 0.2µA 2µm space 1.8µA. 8. Results and discussion. 9. Conclusion. This suggests that defect density such as threading dislocation (TDs) was directly influenced by the patterning and its spacing of the substrate.

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Results and discussion

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  1. Results and discussion 455nm 7

  2. Results and discussion At-15v 5µmspace0.2µA 2µmspace1.8µA 8

  3. Results and discussion 9

  4. Conclusion • This suggests that defect density such as threading dislocation(TDs) was directly influenced by the patterning and its spacing of the substrate. • Enhancement of light extraction efficiency withoutcoupling via the micro-lens(ML) patterned facets. 10

  5. References • Tae Su OH, Seung Hwan KIM, Tae Ki KIM, Yong Seok LEE, Hyun JEONG, Gye Mo YANG, and Eun-Kyung SUH, “GaN-Based Light-Emitting Diodes on Micro-Lens Patterned Sapphire Substrate,” Jpn. J. Appl. Phys.,Vol. 47, No. 7, pp. 5333–5336, 2008. 11

  6. Thanks for your attention ! 12

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