11min. 15min. 20min. 25min. Ge pileup along the SiO2/Si interface. Unconsumed Si. Buried Oxide. Formation of Ge Quantum dots by Selective Oxidation of SiGe alloys for Single-Electron Devices P. W. Li, W. M. Liao, S. W. Lin, P. S. Chen 1 , S. C. Lu 1 , and M. J. Tsai 1
Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author.While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server.
Ge pileup along the
Formation of Ge Quantum dots by Selective Oxidation of SiGe alloys
for Single-Electron Devices
P. W. Li, W. M. Liao, S. W. Lin, P. S. Chen1, S. C. Lu1 , and M. J. Tsai1
Department of Electrical Engineering, National Central University, ChungLi, Taiwan, R.O.C 320
1 Electronics Research and Service Organization, ITRI, Hsinchu, Taiwan, R.O.C
Germanium quantum dots would be formed during thermal oxidation of SiGe/Si-on-insulator
Buried Oxide 375nm
Ge dots versus thermal oxidation time
Plan-view TEM micrographs of Si0.95Ge0.05 after 11min.~25min. oxidation at 900 ℃.
Cross-sectional TEM micrographs of Si0.95Ge0.05 after 11min. and 25min. oxidation at 900 ℃.
Effect of oxidation time on the size and density of Ge dots formed by thermally oxidized Si0.95Ge0.05 at 900 oC.
Ge dots versus Ge composition in Si1-xGex
Plan-view TEM micrographs of different Ge content, 11min. oxidation at 900 ℃.
Ge dot size and density as a function of Ge composition in Si1-xGex at 900 oC thermal oxidation for 11min.
Ge quantum dot Single-Electron devices
(a) Ge dots formation by selective oxidation of Si1-xGex and Ge segregation.
(b) SEM micrograph of a narrow wire.
Id-Vg characteristic and transconductance of Ge SET at Room Temperature.