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h  2

h  2. 1.  2 <  1. Rekombinasjon via tilstand i bandgapet. Spreading of a ’spike’ of electrons by diffusion. t 1 < t 2 < t 3. Diffusjonskonstanter og mobiliteter ved 300 K i intrinsiske materialer (jfr ’Streetman’ Table 4-1). 0.0259 V. 0.0260. 0.0256. 0.0263. 0.0259. 0.0250.

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h  2

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  1. h2 1 2 <1

  2. Rekombinasjon via tilstand i bandgapet

  3. Spreading of a ’spike’ of electrons by diffusion t1 < t2 < t3

  4. Diffusjonskonstanter og mobiliteter ved 300 K i intrinsiske materialer (jfr ’Streetman’ Table 4-1) 0.0259 V 0.0260 0.0256 0.0263 0.0259 0.0250

  5. Current entering and leaving a volume ΔxA Kontinuitetslikningen!

  6. = p0 + δp(x) δp(x)

  7. Deplesjonsone E Vn V0 Vp Electrostaticpotential EC EC ECp EF qV0 ECn EFp EF EFn EV EV EVp EVn Energy bands Particle flow Current

  8. -V0

  9. W - + Figure 5.15 (a): Minority carrier distributions on the two sides of the transition (depletion) region for a forward-biased junction. The figure provides also definitions of distances xn and xp measured from the transition (depletion) region edges.

  10. W I = Ip + In = konstant

  11. Avalanche (skred) gjennombrudd (b) (c) Figure 5.21: Electron-hole pairs generated by impact ionization; (b) a single ionizing collision by an incoming electron and (c) primary, secondary and tertiary collisions.

  12. Ge Si GaAs GaAsP

  13. Rekombinasjonoggenerasjon (Diffusjon) Jeppson

  14. Schottky kontakt på n-type halvledere Vakuumnivå

  15. Schottky kontakt på p-type halvledere Vakuumnivå

  16. Ohmsk kontakt n-type m < s Figure 5.43

  17. Ohmsk kontakt p-type m > s Figure 5.43

  18. - - + Vr + V Forward bias Reverse bias Figure 5.42

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