March meeting 2010
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March Meeting 2010. Huanlong Liu. Femtosecond magnetization dynamics using the inverse Faraday effect. THEO RASING, Radboud University Nijmegen A33.4. Background and experiment techniques. Photon polarization interacts with magnetization Sample: 20 nm GdFeCo film 40 fs laser pulse

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March Meeting 2010

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March meeting 2010

March Meeting 2010

Huanlong Liu


Femtosecond magnetization dynamics using the inverse faraday effect

Femtosecond magnetization dynamics using the inverse Faraday effect

THEO RASING, Radboud University Nijmegen

A33.4


Background and experiment techniques

Background and experiment techniques

  • Photon polarization interacts with magnetization

  • Sample: 20 nm GdFeCo film

  • 40 fs laser pulse

  • Circular polarized: can write to film

  • Linear polarized: cannot write to film – use to read


Results

Results

  • Laser stay at the same position:

  • Laser move fast:


Evolution of the domains

Evolution of the domains

  • Using σ+:

  • Using σ-:

Same state

Initial Driving Motion

Laser pulsing 0.1 ps

0

380 ps

time


Magnetoresistance in magnetic nanostructures the role of nonumiform current

Magnetoresistance in magnetic nanostructures: the role of nonumiform current

TATIANA RAPPOPORT [1] et. Al

[1]: Universidade Federal do Rio de Janeiro

H36.3

Resistance Network

500 nm Py

R2

R1

Vertex: attract current

Anti – vertex: attract or repel current

10 nm thickness


Mechanisms of spin torque driven ballistic precessional switching

Mechanisms of spin torque driven ballistic precessional switching

OUKJAE LEE et al, Cornell University

J37.7


Sample and results

Sample and results

  • Tri-layer sample:

  • Switching time:

  • Due to dipole interaction: IAP->P > IP->AP

sp

Py 20 nm

Py 5 nm

Co

0.1 ns

0.3 ns

1 ns

t


March meeting 2010

Electrical Pulse Modification and Reversal of the exchange-Bias in Magnetic Tunnel Junction Structures

YUN LI et al Cornell University

J37. 10


Temperature exchange bias

Temperature ~ exchange-bias

T > TN

T < TN

  • Normal

  • AF

R

R

H

H

FM

FM

Normal

AF


Switching method

Switching Method

  • Heat up…

heat

current

R

R

R

Hex

Tunnel barrier:

Fe60Co20B20: 3nm

MgO: 1.2 ~ 1.8 nm

Fe60Co20B20: 3nm

H

H

H

Pulse Amplitude


Dynamic spin valve

Dynamic spin valve

SEZEN DEMIRTAS et al, University of Texas

V36.2


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