Actfel device modeling via spice
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ACTFEL Device Modeling via SPICE. J. P. Bender and J. F. Wager Department of Electrical and Computer Engineering Center for Advanced Materials Research Oregon State University Corvallis, Oregon 97731-3211 http://www.ece.orst.edu/~jfw. Organization:. Fowler-Nordheim Diode Model

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ACTFEL Device Modeling via SPICE

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Actfel device modeling via spice

ACTFEL Device Modeling via SPICE

  • J. P. Bender and J. F. Wager

  • Department of Electrical and Computer Engineering

  • Center for Advanced Materials Research

  • Oregon State University

  • Corvallis, Oregon 97731-3211

  • http://www.ece.orst.edu/~jfw


Organization

Organization:

  • Fowler-Nordheim Diode Model

  • Double-sheet Charge Model


Fowler nordheim diode model

Fowler-Nordheim Diode Model


Fowler nordheim diode model q v

Fowler-Nordheim Diode model: Q-V


Fowler nordheim diode model c v

Fowler-Nordheim Diode model: C-V


Fowler nordheim model transient response

Fowler-Nordheim model: Transient response


Fowler nordheim model transferred charge curve

Fowler-Nordheim model: Transferred Charge Curve

Fowler-Nordheim Model

Experimental Data


Fn model scaling with varying v max

FN Model Scaling with Varying Vmax


Modified fowler nordheim diode model

Modified Fowler-Nordheim Diode Model


Double sheet charge model

Double-sheet Charge Model


Two sheet charge model band diagram

Two-sheet Charge Model Band Diagram


Two sheet charge model equivalent circuit

Two-sheet Charge Model Equivalent Circuit


Two sheet charge model

Two-sheet Charge Model

  • 1. Emission Mechanisms

    • Field emission (pure tunneling)

    • Thermal emission

    • Trap-to-band impact ionization

  • 2. Charge Capture

  • The probability that an electron crossing a sheet of charge is captured depends on:

    • Electric field at the sheet

    • Occupancy of the sheet


Two sheet charge model1

Two-sheet Charge Model

Space Charge Creation via Field Emission


Two sheet charge model2

Two-sheet Charge Model

Space Charge Creation via Trap-band Impact Ionization


Two sheet charge model static space charge

Two-sheet Charge Model: Static Space Charge

  • Ionized traps are not allowed to refill

  • FB= 1.5 V (experimental value)

  • Bulk trap depth = 1.38 V


Actfel device modeling via spice

Transferred Charge Capacitance Overshoot (Two-sheet charge model)

Experimental Data

Fowler-Nordheim Diode model


Conclusions

Conclusions

  • Fowler-Norheim Diode

  • Simple yet accurate SPICE model for devices without space charge

  • Two-sheet Charge Model

  • Demonstrates mapping of device physics to SPICE

  • Large amounts of C-V overshoot in SPICE


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