IEE5328 Nanodevice Transport Theory
This presentation is the property of its rightful owner.
Sponsored Links
1 / 26

IEE5328 Nanodevice Transport Theory and Computational Tools PowerPoint PPT Presentation


  • 100 Views
  • Uploaded on
  • Presentation posted in: General

IEE5328 Nanodevice Transport Theory and Computational Tools. Lecture 1: Introduction. Prof. Ming-Jer Chen Dept. Electronics Engineering National Chiao-Tung University Feb. 20, 2013. Motivation of this Nano Course.

Download Presentation

IEE5328 Nanodevice Transport Theory and Computational Tools

An Image/Link below is provided (as is) to download presentation

Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author.While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server.


- - - - - - - - - - - - - - - - - - - - - - - - - - E N D - - - - - - - - - - - - - - - - - - - - - - - - - -

Presentation Transcript


Iee5328 nanodevice transport theory and computational tools

IEE5328 Nanodevice Transport Theory

and Computational Tools

Lecture 1:

Introduction

Prof. Ming-Jer Chen

Dept. Electronics Engineering

National Chiao-Tung University

Feb. 20, 2013

IEE5328 Prof. MJ Chen NCTU


Can we survive in the highly challenging but widely controversial future

Motivation of this Nano Course

Can we survive in the highly-challenging but widely-controversial future?

IEE5328 Prof. MJ Chen NCTU


Advanced device physics hands on calculations

Two Elements of the Course

- Advanced Device Physics- Hands-on Calculations

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

Three Features of the Course:

  • Industry Compatible

  • ITRS Oriented

  • Covering FETs down to 3-nm node

ITRS : International Technology Roadmap for Semiconductors

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

FETs Down-Scaling

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

Polysilicon Gate Bulk Planar Extension

  • Strained Silicon Channel

  • Substrate/Channel Orientation

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

High-k Metal Gate Bulk Planar Extension

  • Strained Silicon Channel

  • Substrate/Channel Orientation

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

High-k Metal Gate FinFETs or Multi-Gate FETs

TSMC 10, 14, and 16 nm

TSMC 20 nm

Planar

Structure

Vertical

Structure

  • Strained Silicon/Germanium/GaAs Channel

  • Substrate/Channel Orientation

  • Rsd issue

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

ITRS Roadmap

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

High-Performance NanoFETs projected by ITRS 2011 (http://www.itrs.net)

(Bulk and SOI)

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

High-Performance FETs projected by ITRS 2011 (http://www.itrs.net)

(Bulk and SOI)

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

High-Performance FETs projected by ITRS 2011 (http://www.itrs.net)

(Multi-Gates and SOI)

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

High-Performance FETs projected by ITRS 2011 (http://www.itrs.net)

(Multi-Gates and SOI)

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

Low-Power NanoFETs projected by ITRS 2011 (http://www.itrs.net)

(Bulk, SOI, and Multi-Gates)

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

Low-Power NanoFETs projected by ITRS 2011 (http://www.itrs.net)

(Bulk, SOI, and Multi-Gates)

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

Two Key Projections by ITRS:

  • EOT down to around 0.5 nm

  • - Tunneling

  • - Additional Mobility Degradation

  • Feature Size (Channel Length) down to 3 nm

  • - Non-equilibrium Transport

  • - DIBL Penetration

  • - Tunneling

Printed Gate Length: as in layout phase

Physical Gate Length Lg: post-processing as determined by TEM or C-V fitting

Channel Length L: Physical Gate Length Lg minus 2 times the overlap extension Lov

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

The Purposes of the Course:

  • Provide Advanced Device Physics for a working nanoFET

  • Capture Key Points behind nanoFETs data and structures, simply through hands-on calculations

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

You will do during this course:

  • Capture Advanced Device Physics

  • Read good papers

  • Derive models and do calculations, given TCAD and/or experimental data

    - Also run TCAD

  • Establish Physical Pictures of your own

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

Course Contents

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

1. High-k Metal-Gate Stacks: MOS Electrostatics

  • MOS Energy Band Diagrams

  • C-V

  • Defects, Oxygen Vacancies

  • Tunneling Paths

  • Models, TCAD, Experimental Data, Calculation, and Fitting

2. High-k Metal-Gate FETs: Channel Mobility

  • Quantum Confinement

  • Band Structure

  • Coulomb Impurity Scattering, Phonon Scattering, Surface Roughness Scattering

  • Remote Interface Plasmons Scattering, Remote Coulomb (Defects) Scattering,

  • Remote Soft Phonon Scattering

  • Models, TCAD, Experimental Data, Calculation, and Fitting

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

3. Band-to-Band Tunneling

  • Energy Band Diagrams

  • Tunneling Paths

  • Models, TCAD, Experimental Data, Calculation, and Fitting

4. Ballistic and Backscattering in Channel

  • Energy Band Diagrams

  • 2-D versus 1-D

  • Models, TCAD, Experimental Data, Calculation, and Fitting

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

5. Degraded Mobility and Saturation Current with Shrinking L

  • Energy Band Diagrams

  • Ballistic Mobility

  • Scattering by Highly-Doped Source/Drain Plasmons

  • Source Starvation

  • Models, TCAD, Experimental Data, Calculation, and Fitting

6. Threshold Roll-off and DIBL Penetration (Electrostatics from Source and Drain)

  • Energy Band Diagrams

  • 2-D versus 1-D

  • Models, TCAD, Experimental Data, Calculation, and Fitting

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

7. Other Issues of Significance - I

  • Ultrathin Source/Drain Extension Junction

  • Components of Series Resistance Rsd

  • Models, TCAD, Experimental Data, Calculation, and Fitting

8. Other Issues of Significance - II

  • Alternative Channel Materials: Ge, GaAs, and Graphene

  • Models, TCAD, Experimental Data, Calculation, and Fitting

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

Course Material to be Delivered:

  • Lecture Notes, Prof. Ming-Jer Chen, 2013.

  • Literature Papers

IEE5328 Prof. MJ Chen NCTU


Iee5328 nanodevice transport theory and computational tools

Grading

Taken-Home Works and Reports Only

IEE5328 Prof. MJ Chen NCTU


  • Login