IEE5328 Nanodevice Transport Theory
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IEE5328 Nanodevice Transport Theory and Computational Tools. Lecture 1: Introduction. Prof. Ming-Jer Chen Dept. Electronics Engineering National Chiao-Tung University Feb. 20, 2013. Motivation of this Nano Course.

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IEE5328 Nanodevice Transport Theory and Computational Tools

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IEE5328 Nanodevice Transport Theory

and Computational Tools

Lecture 1:

Introduction

Prof. Ming-Jer Chen

Dept. Electronics Engineering

National Chiao-Tung University

Feb. 20, 2013

IEE5328 Prof. MJ Chen NCTU


Motivation of this Nano Course

Can we survive in the highly-challenging but widely-controversial future?

IEE5328 Prof. MJ Chen NCTU


Two Elements of the Course

- Advanced Device Physics- Hands-on Calculations

IEE5328 Prof. MJ Chen NCTU


Three Features of the Course:

  • Industry Compatible

  • ITRS Oriented

  • Covering FETs down to 3-nm node

ITRS : International Technology Roadmap for Semiconductors

IEE5328 Prof. MJ Chen NCTU


IEE5328 Prof. MJ Chen NCTU


FETs Down-Scaling

IEE5328 Prof. MJ Chen NCTU


Polysilicon Gate Bulk Planar Extension

  • Strained Silicon Channel

  • Substrate/Channel Orientation

IEE5328 Prof. MJ Chen NCTU


High-k Metal Gate Bulk Planar Extension

  • Strained Silicon Channel

  • Substrate/Channel Orientation

IEE5328 Prof. MJ Chen NCTU


High-k Metal Gate FinFETs or Multi-Gate FETs

TSMC 10, 14, and 16 nm

TSMC 20 nm

Planar

Structure

Vertical

Structure

  • Strained Silicon/Germanium/GaAs Channel

  • Substrate/Channel Orientation

  • Rsd issue

IEE5328 Prof. MJ Chen NCTU


ITRS Roadmap

IEE5328 Prof. MJ Chen NCTU


High-Performance NanoFETs projected by ITRS 2011 (http://www.itrs.net)

(Bulk and SOI)

IEE5328 Prof. MJ Chen NCTU


High-Performance FETs projected by ITRS 2011 (http://www.itrs.net)

(Bulk and SOI)

IEE5328 Prof. MJ Chen NCTU


High-Performance FETs projected by ITRS 2011 (http://www.itrs.net)

(Multi-Gates and SOI)

IEE5328 Prof. MJ Chen NCTU


High-Performance FETs projected by ITRS 2011 (http://www.itrs.net)

(Multi-Gates and SOI)

IEE5328 Prof. MJ Chen NCTU


Low-Power NanoFETs projected by ITRS 2011 (http://www.itrs.net)

(Bulk, SOI, and Multi-Gates)

IEE5328 Prof. MJ Chen NCTU


Low-Power NanoFETs projected by ITRS 2011 (http://www.itrs.net)

(Bulk, SOI, and Multi-Gates)

IEE5328 Prof. MJ Chen NCTU


Two Key Projections by ITRS:

  • EOT down to around 0.5 nm

  • - Tunneling

  • - Additional Mobility Degradation

  • Feature Size (Channel Length) down to 3 nm

  • - Non-equilibrium Transport

  • - DIBL Penetration

  • - Tunneling

Printed Gate Length: as in layout phase

Physical Gate Length Lg: post-processing as determined by TEM or C-V fitting

Channel Length L: Physical Gate Length Lg minus 2 times the overlap extension Lov

IEE5328 Prof. MJ Chen NCTU


The Purposes of the Course:

  • Provide Advanced Device Physics for a working nanoFET

  • Capture Key Points behind nanoFETs data and structures, simply through hands-on calculations

IEE5328 Prof. MJ Chen NCTU


You will do during this course:

  • Capture Advanced Device Physics

  • Read good papers

  • Derive models and do calculations, given TCAD and/or experimental data

    - Also run TCAD

  • Establish Physical Pictures of your own

IEE5328 Prof. MJ Chen NCTU


Course Contents

IEE5328 Prof. MJ Chen NCTU


1. High-k Metal-Gate Stacks: MOS Electrostatics

  • MOS Energy Band Diagrams

  • C-V

  • Defects, Oxygen Vacancies

  • Tunneling Paths

  • Models, TCAD, Experimental Data, Calculation, and Fitting

2. High-k Metal-Gate FETs: Channel Mobility

  • Quantum Confinement

  • Band Structure

  • Coulomb Impurity Scattering, Phonon Scattering, Surface Roughness Scattering

  • Remote Interface Plasmons Scattering, Remote Coulomb (Defects) Scattering,

  • Remote Soft Phonon Scattering

  • Models, TCAD, Experimental Data, Calculation, and Fitting

IEE5328 Prof. MJ Chen NCTU


3. Band-to-Band Tunneling

  • Energy Band Diagrams

  • Tunneling Paths

  • Models, TCAD, Experimental Data, Calculation, and Fitting

4. Ballistic and Backscattering in Channel

  • Energy Band Diagrams

  • 2-D versus 1-D

  • Models, TCAD, Experimental Data, Calculation, and Fitting

IEE5328 Prof. MJ Chen NCTU


5. Degraded Mobility and Saturation Current with Shrinking L

  • Energy Band Diagrams

  • Ballistic Mobility

  • Scattering by Highly-Doped Source/Drain Plasmons

  • Source Starvation

  • Models, TCAD, Experimental Data, Calculation, and Fitting

6. Threshold Roll-off and DIBL Penetration (Electrostatics from Source and Drain)

  • Energy Band Diagrams

  • 2-D versus 1-D

  • Models, TCAD, Experimental Data, Calculation, and Fitting

IEE5328 Prof. MJ Chen NCTU


7. Other Issues of Significance - I

  • Ultrathin Source/Drain Extension Junction

  • Components of Series Resistance Rsd

  • Models, TCAD, Experimental Data, Calculation, and Fitting

8. Other Issues of Significance - II

  • Alternative Channel Materials: Ge, GaAs, and Graphene

  • Models, TCAD, Experimental Data, Calculation, and Fitting

IEE5328 Prof. MJ Chen NCTU


Course Material to be Delivered:

  • Lecture Notes, Prof. Ming-Jer Chen, 2013.

  • Literature Papers

IEE5328 Prof. MJ Chen NCTU


Grading

Taken-Home Works and Reports Only

IEE5328 Prof. MJ Chen NCTU


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