Effect of VUV and UV Irradiation on low- k Dielectrics. H. Sinha a , J.L. Lauer a , M.T. Nichols a , G.A. Antonelli b , Y. Nishi c and J.L. Shohet a a University of Wisconsin-Madison, Madison, WI 53706 b Novellus Systems, Tualatin, OR 97062 c Stanford University, Stanford, CA 94305.
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Effect of VUV and UV Irradiation on low-kDielectrics
Effect of VUV irradiation on SiCOH
Effect of UV irradiation on SiCOH
231 nm SiCOH (k = 2.55) on p-type Si substrate
The peak at 8.2eV decays after VUV irradiation, but reappears after UV irradiation.
UV irradiation causes a decrease in the number of trapped positive charges
VUV Irradiation System
500 nm SiOCH (k = 2.55)
Kelvin Probe System
i(t) =( VSP + Vb ) dC/dt
Mercury Probe System
Work supported by the Semiconductor Research Corporation under contract 2008-KJ-1781,Task no 1781.001. The UW Synchrotron is supported by NSF Grant DMR-0084402.
VUV spectroscopy, C-V characteristics, surface potential and photoemission current measurements indicate electron depopulation caused by the presence of trapped positive charges in defect states. These quantities show a correlated saturation as photon dose increases.