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1. Plasma-enhanced CVD. Lev Berkovich
Professor B. Bavarian
2. Plasma-enhanced CVD Relation of PECVD to other processes
Typical processes and hardware
Examples of PECVD modeling software
3. PECVD and other CVD processes.
4. What is Plasma-enhanced CVD Plasma Enhanced CVD (PECVD) is a process where glow-discharge plasma is sustained in a reaction chamber. This technology was developed to meet a demand from the semiconductor industry to have a low temperature process of silicon nitride films for the passivation and insulation of the complete devices, that could not be exposed to the temperatures that are normal for the CVD ~1000 0C.
The most common way to excite the plasma is the RF field. PECVD is mostly used to deposit dielectrics, and therefore the DC excitation will not work. Frequency range is usually from 100kHz to 40MHz. The process does not require a deep vacuum, so the reduced pressure between 50 mtorr to 5 torr is used. The ion density is usually between 109 1011 1/cm3 and average electron energies are between 1 to 10 eV.
Presence of plasma changes the thermodynamics of surface reactions and considerably lowers the temperature at which reactions are possible. For instance, for TiC the deposition reaction is not thermodynamically possible bellow 1218 0K. However, in a presence of plasma, the reaction is possible at as low as 700 0K.
The following table provides a sampling of materials deposited by the PECVD process.
5. PECVD films, Source gases and Deposition Temperatures
6. PECVD reactors
7. PECVD reactors
8. PECVD reactors
9. Applications of PECVD
11. Applications of PECVD
12. Applications of PECVD
13. Applications of PECVD
14. Applications of PECVD
15. PECVD modeling and computerized control
16. PECVD modeling and computerized control