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Enhancement Type NMOS Amplifier. Electronic Design Laboratory. Overview. 2N7000 Data Sheet Triode Region Characteristics Saturated Region Characteristics Four Resistor Bias Network Voltage Gain. Data Sheet. Drain-Source Voltage: V DS = 60 V Maximum

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Enhancement type nmos amplifier

Enhancement Type NMOS Amplifier

Electronic Design Laboratory


Overview
Overview

  • 2N7000 Data Sheet

  • Triode Region Characteristics

  • Saturated Region Characteristics

  • Four Resistor Bias Network

  • Voltage Gain


Data sheet
Data Sheet

  • Drain-Source Voltage: VDS = 60 V Maximum

  • Drain-Gate Voltage: VGS = 20 V Maximum, Continuous

  • Drain Current: ID = 200 mA, Continuous

  • Gate Threshold Voltage: VTN = 0.8 V, Minimum, 2.1 V Typical, & 3.0 V Maximum


Data sheet1
Data Sheet

  • Forward Transconductance: gm = 100 mS, Minimum and 320 mS, Typical

  • Internal Circuit:

    • Body Connected to Source

    • Freewheeling Diode


Triode region parameters

D

G

0V

to

6V V

S

COM

Triode Region & Parameters

  • Kn = ?

  • VTN = ?

0.5 V


Triode region
Triode Region

Curve Tracer Plots of Triode Region


Saturated region
Saturated Region

Curve Tracer Plots of Saturated Region


Cursor points
Cursor Points

 = ?

Curve Tracer Plots of Saturated Region


Cursor points1
Cursor Points

KN = ?

VTN = ?

Curve Tracer Plots of Saturated Region



Small signal voltage gain
Small-Signal Voltage Gain

  • From AC Equivalent & Small-Signal Model Calculate Voltage Gain

  • Measure Voltage Gain at:

    • 100 Hz

    • 1 kHz

    • 10 kHz

    • 100 kHz


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