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Enhancement Type NMOS Amplifier. Electronic Design Laboratory. Overview. 2N7000 Data Sheet Triode Region Characteristics Saturated Region Characteristics Four Resistor Bias Network Voltage Gain. Data Sheet. Drain-Source Voltage: V DS = 60 V Maximum

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enhancement type nmos amplifier

Enhancement Type NMOS Amplifier

Electronic Design Laboratory

overview
Overview
  • 2N7000 Data Sheet
  • Triode Region Characteristics
  • Saturated Region Characteristics
  • Four Resistor Bias Network
  • Voltage Gain
data sheet
Data Sheet
  • Drain-Source Voltage: VDS = 60 V Maximum
  • Drain-Gate Voltage: VGS = 20 V Maximum, Continuous
  • Drain Current: ID = 200 mA, Continuous
  • Gate Threshold Voltage: VTN = 0.8 V, Minimum, 2.1 V Typical, & 3.0 V Maximum
data sheet1
Data Sheet
  • Forward Transconductance: gm = 100 mS, Minimum and 320 mS, Typical
  • Internal Circuit:
    • Body Connected to Source
    • Freewheeling Diode
triode region parameters

D

G

0V

to

6V V

S

COM

Triode Region & Parameters
  • Kn = ?
  • VTN = ?

0.5 V

triode region
Triode Region

Curve Tracer Plots of Triode Region

saturated region
Saturated Region

Curve Tracer Plots of Saturated Region

cursor points
Cursor Points

 = ?

Curve Tracer Plots of Saturated Region

cursor points1
Cursor Points

KN = ?

VTN = ?

Curve Tracer Plots of Saturated Region

small signal voltage gain
Small-Signal Voltage Gain
  • From AC Equivalent & Small-Signal Model Calculate Voltage Gain
  • Measure Voltage Gain at:
    • 100 Hz
    • 1 kHz
    • 10 kHz
    • 100 kHz
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